2014
DOI: 10.1155/2014/490405
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Design and Optimization of Polarization Splitting and Rotating Devices in Silicon-on-Insulator Technology

Abstract: We review polarization splitting and rotating photonic devices based on silicon-on-insulator technology platform, focusing on their performance and design criteria. In addition, we present a theoretical investigation and optimization of some rotator and splitter architectures to be employed for polarization diversity circuits. In this context, fabrication tolerances and their influences on device performance are theoretically estimated by rigorous simulations too.

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Cited by 15 publications
(12 citation statements)
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“…4 The key elements for realizing the polarizationdiversity are polarization beam splitters (PBSs) 5,6 and rotators (PSRs). 7,8 Many types of siliconwaveguide PBSs and PSRs have been reported based on various structures, including directional coupler, 9,10 multimode interference (MMI), 11 hybrid plasmonic waveguide, 12 grating, 13 photonic crystal, 14 and so on.…”
mentioning
confidence: 99%
“…4 The key elements for realizing the polarizationdiversity are polarization beam splitters (PBSs) 5,6 and rotators (PSRs). 7,8 Many types of siliconwaveguide PBSs and PSRs have been reported based on various structures, including directional coupler, 9,10 multimode interference (MMI), 11 hybrid plasmonic waveguide, 12 grating, 13 photonic crystal, 14 and so on.…”
mentioning
confidence: 99%
“…Hence, integrated receivers need to be insensitive to polarization to avoid timevarying losses and high bit error rates (BERs). Such receivers based on silicon on insulator (SOI) have used the polarization diversity technique with a combination of splitters and rotators [1], [2]. The TM output port of the polarization splitter has an inserted rotator which rotates the electric field by 90 • , converting the TM 00 mode into a TE 00 mode.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the highly sophisticated silicon semiconductor technology, silicon photonics could provide us with an economical, highly integrated, electronic-photonic platform, in which ultra-compact photonic devices and electronic circuits are converged [1][2][3][4][5][6][7][8]. However, Si nanowire waveguides (WGs) have high structural birefringence, which results in large polarization-mode dispersion (PMD) and polarization dependent loss [9,10]. In order to compensate for PMD, there is an approach which involves a precise fabrication accuracy of 1 nm [11].…”
Section: Introductionmentioning
confidence: 99%