Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations

Kumar, R. Akshay; Bethapudi, Leela Koteswari; Kommareddy, Jeevani; Thommandru, Bhanu Sai; Sateesh, Jasti; Gorantla, Prakash Raju; Puli, Ashok; Karumuri, Girija Sravani; Rao, K. Srinivasa

doi:10.1007/s00542-017-3403-z

Cited by 46 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The article that supports this work is (Shanthi, Srinivasa Rao, and Girija Sravani 2020) in which higher isolation of -42.11 dB is provided. (Ravirala et al 2018) has similar higher isolation performance in which isolation of -61 dB is provided (Ravirala et al 2018) The other article that opposes the present work is (Cho et al 2005) with isolation of around -20.7 dB. Isolation of -28.4 dB was obtained by (Narayana et al 2017).…”

Section: Discussionsupporting

confidence: 47%

Simulation of Rectangular Shaped RF MEMS Shunt Switch and Comparing its Isolation Performance with Series Switch at DC - 30 GHz

2022

pnr

View full text Add to dashboard Cite

In this paper, isolation performance of rectangular shaped RF MEMS shunt and series switch is described and simulated at up to 30 GHz using HFSS software. Materials and Methods: The isolation performance of rectangular shaped shunt switch (n=25) was compared to the isolation performance of rectangular shaped series switch at a frequency range of upto 30 GHz. Beam was built over the two coplanar waveguides. Samples were calculated using sample computation having a pretest power of 80 % where Alpha, Beta are 0.05 and 0.2 respectively. Results: The novel shunt switch has better isolation performance (-36.2488 dB) compared to the series switch (-19.4685 dB). The optimized dimensions for maximum isolation performance were L=360 µm, W=100 µm, T=1 µm for beam. The attained significance of isolation performance is 1<0.001 (p<0.05). Conclusion:The observed results show that novel shunt switch isolation performance is significantly higher than series switch.

show abstract

Section: Discussionsupporting

confidence: 47%

Simulation of Rectangular Shaped RF MEMS Shunt Switch and Comparing its Isolation Performance with Series Switch at DC - 30 GHz

2022

pnr

View full text Add to dashboard Cite

show abstract

“…The damping coefficient is helps the beam to return to its original position. The damping of a parallel plate geometries is derived from Reynolds gas-film equation is [16]- [20].…”

Section: E Damping Coefficient and Quality Factormentioning

confidence: 99%

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

et al. 2019

View full text Add to dashboard Cite

This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The proposed switch structure is optimized, designed, and simulated with FEM analysis such as electromechanical and electromagnetic by using COMSOL and HFSS tools respectively. The best performance of the switch is observed by varying different parameters such as beam material, beam thickness, dielectric thickness, and airgap. The proposed switch with different meandering techniques attains the pull-in voltage in the range of 10.3-46 V, particularly the three uniform meander technique has low actuation voltage of 10.3 V. The RF performance of the device is particularly tuned in the range of 26.5-40 GHz frequency range and it is analyzed for all types of meanders. Among them, the non-uniform single meander has attained the best isolation of −54.13 dB at 40 GHz in the off state. The insertion and return losses of the device are −0.514 dB and −17.35 dB over 1-40 GHz frequency in on state.

show abstract

“…Different RF switches have different mechanical and electrical structures, so their switching speed, isolation, insertion loss, return loss and other technical metrics are also different [20]. At present, common RF switches are mainly divided into two categories: electromechanical switches and solid-state switches [21,22].…”

Section: Comparison Of Different Rf Switchesmentioning

confidence: 99%

Design of a RF Switch Used in Redundant Atomic Clock Configurations

Hou

Wang

Tang

et al. 2019

Sensors

View full text Add to dashboard Cite

Atomic clocks provide frequency reference signals for communication, aerospace, satellite navigation and other systems. The redundant configuration of atomic clocks is necessary for ensuring the continuity and stability of the system. A radio frequency (RF) switch is usually used as a switching device in the switching system of the host atomic clock and the backup atomic clock. When the atomic clock fails, the switching between the host and the backup clock can be carried out quickly. Aiming at the fast switching requirements of atomic clock RF signals, this paper proposes a new series-shunt Positive Intrinsic Negative (PIN) switch design. In this paper, the evaluation of the RF switches is conducted by using the metrics of switching speed, insertion loss, isolation, return loss at on state and return loss at off state. Experimental result shows that the new PIN switch has better and more comprehensive performance metrics than the electromechanical switch, FET switch and conventional PIN switch. In particular, the switching speed is 53 ns faster than the conventional series-shunt PIN switch.

show abstract

Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations

Cited by 46 publications

References 7 publications

Simulation of Rectangular Shaped RF MEMS Shunt Switch and Comparing its Isolation Performance with Series Switch at DC - 30 GHz

Simulation of Rectangular Shaped RF MEMS Shunt Switch and Comparing its Isolation Performance with Series Switch at DC - 30 GHz

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

Design of a RF Switch Used in Redundant Atomic Clock Configurations

Contact Info

Product

Resources

About