Design and performance analysis of tri-layered strained Si/Si_1–x Ge _x /Si heterostructure DG feedback FET

Abstract

This work presents the design and performance analysis of a tri-layered strained Si/Si1−xGex/Si heterostructure double gate feedback field-effect transistor (DG FBFET). The proposed DG FBFET is designed by introducing biaxial strain in the device by sandwiching a Si1−xGex layer between two thin Si layers to provide high ON current as well as ultra-steep switching characteristics. The device offers a significantly high ON current (3.4×10−3 A/μm), high ION/IOFF ratio (∼ 1010), a large memory window of 1.06 V, and an extremely low subthreshold swing (∼ 0.3 µV/decade), which can be very useful for memory and neuromorphic applications. Furthermore, the ON/OFF switching of the device has been accomplished at a lower threshold voltage (0.287V), allowing it to be utilized in low-power electronics. Synopsys TCAD tool has been used to create the device structure and analyze the electrical performances of the device.