Design and performance analysis of ohmic contact based SPMT RF MEMS switch

Rajasekhar, K.; GirijaSravani, K.; Srinivasa Rao, K.

doi:10.1007/s00542-023-05503-z

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…In 2023, Bansal proposed a broadband terahertz MEMS ohmic switch for 6G communication operating at 150 GHz, achieving 20 dB of isolation and an actuation voltage of 20 V, which remains relatively high for integrated devices [24]. In the same year, Rajasekhar et al showcased an SPMT switch design with a multi-contact cantilever structure, operating at an actuation voltage of 3.5 V but limited to frequencies below 10 GHz [25]. From these studies, it becomes evident that optimization in terms of actuation voltage, insertion loss, and isolation remains a challenge for high-frequency switches.…”

Section: Introductionmentioning

confidence: 99%

Design of Broadband High-Frequency Multi-Throw RF-MEMS Switches

Yu,

Zhang,

et al. 2024

Micromachines

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This paper introduces a broadband triple-pole triple-throw (3P3T) RF MEMS switch with a frequency range from DC to 380 GHz. The switch achieves precise signal control and efficient modulation through its six-port design. It achieves an insertion loss of −0.66 dB across its frequency range, with isolation and return loss metrics of −32 dB and −15 dB, respectively. With its low actuation voltage of 6.8 V and rapid response time of 2.28 μs, the switch exemplifies power-efficient and prompt switching performance. The compact design is ideal for integration into space-conscious systems. This switch is pivotal for 6G research and has potential applications in satellite communications, military radar systems, and next-generation radio applications that require multi-antenna access.

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Section: Introductionmentioning

confidence: 99%