Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

Wang, Zhiqiang; Shi, Xiuzhi; Xue, Yang; Tolbert, Leon M.; Wang, Fei; Blalock, Benjamin J.

doi:10.1109/tie.2013.2297304

Cited by 235 publications

(70 citation statements)

References 16 publications

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“…For the switch turning on while the complementary switch is already in on-state, this type of fault is called hard switching fault (HSF). In contrast, the switch which is already in the onstate experiences a so-called fault under load (FUL) [44], [45]. However, in MV applications, faults due to isolation and/or flashover failures are especially critical due to their extremely fast transients.…”

Section: Introductionmentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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Section: Introductionmentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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“…These devices have the same on-state resistance, while their current ratings and die sizes are different. [19]- [22] The test circuit configuration and hardware test setup for short circuit capability evaluation have been introduced in part II of [17]. The devices will be tested under different fault types, After the destructive tests, the impedance between the three terminals of the DUT and the forward voltage of the body diode are measured using a digital multimeter.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Wang

Shi

Tolbert

et al. 2016

IEEE Trans. Power Electron.

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221

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This paper presents a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions, with case temperatures from 25 o C to 200 o C and DC bus voltages from 400 V to 750 V. It is found that the commercial SiC MOSFETs can withstand short circuit current for only several microseconds with a DC bus voltage of 750 V and case temperature of 200 o C. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Specifically, an electro-thermal model is built to estimate the device internal temperature distribution, considering the temperature dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e. thermal, diffusion, and avalanche generation currents). Numerical results show that the short circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high temperature related gate oxide damage.

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“…After blanking time, this value is compared with a predetermined threshold to indicate SC or OC. This method can be effectively used for Si and SiC MOSFETs as well [19][20][21].…”

Section: Failure Detection Methodsmentioning

confidence: 99%

Analysis of Fault-Tolerant Operation Capabilities of an Isolated Bidirectional Current-Source DC–DC Converter

et al. 2019

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Reliable and predictable operation of power electronics is of increasing importance due to continuously growing penetration of such systems in industrial applications. This article focuses on the fault-tolerant operation of the bidirectional secondary-modulated current-source DC–DC converter. The study analyzes possible topology reconfigurations in case an open- or short-circuit condition occurs in one of the semiconductor devices. In addition, multi-mode operation based on topology-morphing is evaluated to extend the operating range of the case study topology. The influence of post-failure modes on the functionality and performance is analyzed with a 300 W converter prototype. It is demonstrated that failure of one transistor in the current-source side can be mitigated without dramatic loss in the efficiency at maximum power, while preserving bidirectional operation capability.

show abstract

Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

Cited by 235 publications

References 16 publications

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Analysis of Fault-Tolerant Operation Capabilities of an Isolated Bidirectional Current-Source DC–DC Converter

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