Design and performance of GaAs MMIC CPW baluns using overlaid and spiral couplers

Gokdemir, T.; Economides, S.B.; Khalid, A.; Rezazadeh, A.A.; Robertson, I.D.

doi:10.1109/mwsym.1997.602818

Cited by 14 publications

(7 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Generally, S 12 and S 21 of the Z-transformers are about 3-dB higher than the interleaved transformer. Higher S 21 and S 12 indicate tighter transformer coupling, as discussed above.…”

Section: On-chip Transformersmentioning

confidence: 97%

See 1 more Smart Citation

Modeling and measurements of novel monolithic inductors and transformers

Aly¹,

El-Sharawy²

2004

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

This paper presents the analysis, modeling, and measurements of a novel configuration of spiral inductors and transformers to enhance the figure of merits. The present configuration utilizes a Z-shaped multilayer metalization to increase the Q of the monolithic inductors, and increase K without sacrificing the Q of the monolithic transformers. A simple two-port lumped-circuit model derived from inductor S-parameters is used to illustrate the potential of the new design. Several on-chip transformers have been fabricated using the Motorola 0.18-micron copper process. The experimental data shows good agreement with predicted data obtained using the HFSS software simulator. A noticeable increase of mutual coupling and Q is achieved. The transformer can be optimized to achieve high Q or high K or both.

show abstract

“…Generally, S 12 and S 21 of the Z-transformers are about 3-dB higher than the interleaved transformer. Higher S 21 and S 12 indicate tighter transformer coupling, as discussed above.…”

Section: On-chip Transformersmentioning

confidence: 97%

“…An approach to realize baluns [12] or transformers is to use spirals to minimize the required chip space. Previous research [13] shows that the quality factor of the two-port transformer is higher than the Q of the inductor by a factor of 1 ϩ k, where k is the coupling coefficient.…”

Section: On-chip Transformersmentioning

confidence: 99%

Modeling and measurements of novel monolithic inductors and transformers

Aly¹,

El-Sharawy²

2004

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

show abstract

“…Figure 2(a) illustrates the planar Marchand balun composed of two back-to-back quarterwavelength coupled lines [8]. Monolithic Marchand baluns had been realized in ICs and most of them are fabricated on the semi-insulating GaAs substrate or the high-resistivity (>4000 Q.cm) silicon substrate [9][10]. Recently, the Marchand baluns are implemented using interconnect metals with shielding ground plane on a standard silicon substrate.…”

Section: B 3-port 180°balunmentioning

confidence: 99%

“…Because the balun directly on the substrate without the shielding ground plane has higher effective dielectric constant, wide bandwidth and size reduction can be achieve on our proposed Marhcnad balun at the cost of the loss. The coupled lines in the planar Marchand balun can be formed by Lange couplers [13], broadside coupled lines [9], and spiral transmission coupled lines [9][10][11]. An interleave transformer as a quarter wavelength coupled line is employed in our work to shrink the balun size, as shown in Fig.…”

Section: B 3-port 180°balunmentioning

confidence: 99%

Integrating Passive Components With Active Circuits Using Standard Silicon Process for Millimeter-Wave Applications

Meng

Tseng

2008

2008 Global Symposium on Millimeter Waves

View full text Add to dashboard Cite

Several passive components based on the quarterwavelength transmission line can be integrated with active circuits for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on the standard low-resisitivity (-104 Q cm) silicon substrate. New circuit design concepts such as balanced loss and distortionless transmission line are applied to tolerate the unavoidable loss and thus the size reduction is achieved because of the high effective dielectric constant.

show abstract

“…Therefore, compact and monolithically integratable passive baluns are highly desired. Recently, monolithic compensated baluns of the Marchand type [2] have been revisited and shown to be feasible in wireless communication applications [3]- [5]. However, they suffer from high imbalance at the output ports in terms of both magnitude and phase angle.…”

Section: Introductionmentioning

confidence: 99%

Spiral transmission-line baluns for RF multichip module packages

Yoon

Frye³

et al. 1999

IEEE Trans. Adv. Packag.

View full text Add to dashboard Cite

We describe a design method and lumped model for a circular spiral transmission-line balun. All lumped values are extracted from the geometric parameters of the balun. From simulation, the design parameters with well predicted characteristics are defined. The balun is fabricated using multi-chip module processing technology, which is suitable for integration in RF packages. Measurements show a wide bandwidth of 1.5-4.1 GHz and excellent balanced outputs. Amplitude imbalance less than 0.5 dB and phase imbalance less than 4 are achieved. The simulation results are compared with the measurement. The model captures all important properties of the balun with reasonably high accuracy.

show abstract

Design and performance of GaAs MMIC CPW baluns using overlaid and spiral couplers

Cited by 14 publications

References 6 publications

Modeling and measurements of novel monolithic inductors and transformers

Modeling and measurements of novel monolithic inductors and transformers

Integrating Passive Components With Active Circuits Using Standard Silicon Process for Millimeter-Wave Applications

Spiral transmission-line baluns for RF multichip module packages

Contact Info

Product

Resources

About