Design and performance of trapatt devices, oscillators and amplifiers

Oxley, C. H.; Howard, A.M.; Purcell, J.J.

doi:10.1049/ij-ssed.1976.0004

Cited by 3 publications

(1 citation statement)

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“…Although Trapatt diodes [1,2,3] have given way in immediate practical importance to the f ield effect transistor,, they are-still worth a limited amount of investigation because of the fundamental interest in impact ionisation, as a limit on permissible voltages and as a cause of device failure, along wlth the feature that a Trapatt diode is an efficient oscillator. The advent of optoelectronic switches [4,5] now makes it possible to examine the performance of X-band Trapatt diodes in a more fundamental way than by making diodes and observing os-cillations if any.…”

Section: Introductionmentioning

confidence: 99%

Microwave Trapped Plasma Devices Observed on a 35 GHz Sampling Oscilloscope

Carroll

Everard

1979

9th European Microwave Conference, 1979

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Optoelectronic switches have been built to generate and sample-100 volt pulses in 10 ps. This gives a unique opportunity to obsserve avalanche processes in X-band Trapatt diodes which are driven well above breakdown. The expected behaviour of such Trapatt diodes in a resistive non-oscillatory circuit is reviewed for a step voltage drive and also for an optical pulse input. It is concluded that 10 ps switches are essential to provide a sufficiently fast ramp voltage to initiate the trapped plasma and to sample adequately the subsequent collapse of voltage across the diode. Progress in this technique of optoelectronic sampling is reviewed.

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