1975
DOI: 10.1109/tmtt.1975.1128645
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Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect Transistors

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Cited by 59 publications
(12 citation statements)
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“…However, oscillators designed for maximum output power achieve the highest efficiency by reducing the drain current to Class-AB operation, i.e., -. Maeda recognized these two conditions on early research with MESFET oscillators [12], and this trend is found in many published MESFET oscillator papers.…”
Section: Introductionmentioning
confidence: 87%
See 1 more Smart Citation
“…However, oscillators designed for maximum output power achieve the highest efficiency by reducing the drain current to Class-AB operation, i.e., -. Maeda recognized these two conditions on early research with MESFET oscillators [12], and this trend is found in many published MESFET oscillator papers.…”
Section: Introductionmentioning
confidence: 87%
“…The oscillation condition requires that (1) where and are the impedances looking into the drain port of the oscillator and and are the impedances looking into the load circuit. To be more specific, is negative when oscillating, and is usually designed to be approximately three times larger in magnitude than for maximum output power [12].…”
Section: Oscillator Designmentioning
confidence: 99%
“…Fig. 3 shows the simulation results of the reflection coefficient that the real value of S11(-1.813+j0.937) is larger than 1 in the Smith chart [9]- [10].…”
Section: Design Of An Mmic Vco Based On a Clappgouriet Oscillatormentioning
confidence: 99%
“…Instead, output-matching stubs were tuned to meet the small-signal oscillation condition derived in [6]. The designed cell was used as a fundamental frequency selection and harmonic-suppression component of an oscillator circuit.…”
Section: Design Of a Harmonic Suppressed Oscillatormentioning
confidence: 99%