2013
DOI: 10.1109/jlt.2013.2286859
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Design and Performance Study of a Compact SOI Polarization Rotator at 1.55 μm

Abstract: This is the accepted version of the paper.This version of the publication may differ from the final published version. Permanent

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Cited by 42 publications
(8 citation statements)
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“…In this case, the phase matching h moves from h = 107 nm for isolated or weakly coupled guides to h = 120 nm, which is due to the strong coupling. The coupling length can be defined as Lc = π/(βeven-βodd) [29] where βeven and βodd are the propagation constants of the even and odd supermodes, respectively. Variations of coupling length with the height (h) of the Poly-Si layer are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In this case, the phase matching h moves from h = 107 nm for isolated or weakly coupled guides to h = 120 nm, which is due to the strong coupling. The coupling length can be defined as Lc = π/(βeven-βodd) [29] where βeven and βodd are the propagation constants of the even and odd supermodes, respectively. Variations of coupling length with the height (h) of the Poly-Si layer are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The design presented here uses two simple silicon nanowires, which would be simpler than the design approaches reported earlier by using slot waveguides [12][13][14][15]. As this structure does not consider any bend section or slanted side wall [8][9][10] or trench with different etching depth [11], it would be simpler to fabricate using a single mask.…”
Section: Discussionmentioning
confidence: 99%
“…Moreover, it can rotate only one polarization state for one input direction. Simpler PR by using vertical slots guides have also been reported [13,14,15]. Three WGs-based polarization splitter and rotator have also been reported [16].…”
Section: Introductionmentioning
confidence: 96%
“…Since the cross-section of the proposed PBS has a multi-layer boundary, it is essential to accurately find the isolated mode and supermode profiles of the horizontal triple-slot waveguides. The VFEM based on the H-field can serve as a powerful method to calculate the effective indices and modal fields for the horizontal triple-slot waveguides based PBS [30,31]. This VFEM is one of the most rigorous methods to characterize the horizontal triple-slot waveguides as the H field is naturally continuous at the interfaces.…”
Section: Theorymentioning
confidence: 99%