Design and realisation of InP-HBTs for optical telecommunications

Rezazadeh, A.A.; Sheng, H.; Bashar, S.H.; Wake, D.

doi:10.1049/ic:19990231

IEE Colloquium on Opto-Electronic Interfacing at Microwave Frequencies 1999

DOI: 10.1049/ic:19990231

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Design and realisation of InP-HBTs for optical telecommunications

A.A. Rezazadeh

H. Sheng²,

S.H. Bashar³

et al.

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2019

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“…As opposed to a homojunction, a heterojunction is a junction that happens between two different semiconductor materials having different gaps. In 1951, William Shokley proposed the heterojunction, and as reported elsewhere [4] the main goal of using the heterojunction is to improve semiconductor performances, because it gives an additional degree of freedom to devices in comparison to the homojunction [5].…”

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confidence: 99%

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How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?

Ouchrif¹,

Baghdad²,

Sahel³

et al. 2019

IJECE

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In telecommunication systems, Heterojunction Bipolar Transistors (HBTs) are used extensively due to their good electrical characteristics. The work presented in this paper aims to enhance the electrical performance of the InP / InGaAs Single Heterojunction Bipolar Transistor (SHBT) in terms of the static current gain β. Silvaco’s TCAD tools were used for the simulation of the output characteristics of the studied electronic device. Initially, we used the interactive tool Deckbuild to define the simulation program and the device editor DevEdit to design the device structure, and we also used the simulator Atlas which allows the prediction of the electrical characteristics of most semiconductor devices. Because of several phenomena occuring within the electronic device SHBT, we added some physical models included in the simulator such as SRH, BBT.STD. Afterwards, we investigated the influence of doping concentrations of the base and the collector Nb and Nc on the electrical performance of the InP/InGaAs SHBT, and particularly in terms of the static current gain β. Finally, based on optimal values of the selected parameters, we have defined an optimized device that has a highest current gain β.

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confidence: 99%

“…Heterojunction bipolar transistors (HBTs) based on III-V semiconductor materials are interesting for power and high frequency applications [4,5]. The use of wide bandgap emitters is the main raison of HBTs performances.…”

mentioning

confidence: 99%

How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?

Ouchrif¹,

Baghdad²,

Sahel³

et al. 2019

IJECE

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Design and realisation of InP-HBTs for optical telecommunications

Cited by 1 publication

References 0 publications

How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?

How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?

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