Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Abstract

In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than 012 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its f max . Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.

A High Conversion-Gain $Q$-Band InP DHBT Subharmonic Mixer Using LO Frequency Doubler

“…The frequency doubler should convert the externally applied LO excitation at GHz into a GHz frequency signal with sufficient amplitude ( V) to drive the single-ended mixer. The frequency doubler design is based on reactive termination at the second harmonic at the input side of device and short-circuit termination at the fundamental at the output side [11]. The second harmonic reactive termination implemented with the shorted line in Fig.…”

A K-band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun

“…FETs are attractive to generate second harmonic signal due to the square law relation [8]. However, HBT devices are more advantageous to have low 1/f noise and higher output power [10]- [11]. HBT frequency doublers can also be integrated with VCOs in the same HBT process.…”

A Novel HBT Frequency Doubler Design for Millimeter-Wave Applications

“…Approximate design methodologies exist for FET based multipliers [1]- [2], however these methods are not easily applicable to HBT based frequency multipliers due to the highly nonlinear base-emitter junction. A millimeter-wave SiGe HBT frequency doubler design based on reactive termination at the second harmonic at the input side and the fundamental at the output side was reported in [3]. A potential problem with this approach is that optimum reactive terminations may let the frequency multiplier operate close to the unstable region [2].…”