2021
DOI: 10.1038/s41467-021-25627-y
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Design and realization of topological Dirac fermions on a triangular lattice

Abstract: Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele’s original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with hexagonal symmetry. Yet, in the majority of cases, this recipe leads to triangular lattices, typically hosting meta… Show more

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Cited by 28 publications
(49 citation statements)
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References 40 publications
(40 reference statements)
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“…Here, we demonstrate real material systems that can fully capture this multiorbital model and exhibit large-gap QSH states. Especially, recent experiments demonstrated the successful growth of In monolayer on SiC surface, which has a triangular lattice and shows nontrivial topological properties, as observed by STM/STS and ARPES [29]. We thus resort to the epi-taxial growth of In monolayer on a series of semiconductor substrates, including diamond, SiC, Si, Ge, and InAs.…”
Section: Realization Of Qsh States On Semiconductor Substratesmentioning
confidence: 99%
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“…Here, we demonstrate real material systems that can fully capture this multiorbital model and exhibit large-gap QSH states. Especially, recent experiments demonstrated the successful growth of In monolayer on SiC surface, which has a triangular lattice and shows nontrivial topological properties, as observed by STM/STS and ARPES [29]. We thus resort to the epi-taxial growth of In monolayer on a series of semiconductor substrates, including diamond, SiC, Si, Ge, and InAs.…”
Section: Realization Of Qsh States On Semiconductor Substratesmentioning
confidence: 99%
“…Importantly, the DFT calculated results capture well the salient features of the mapped topological phase diagram in the TB parameter space. As the proposed systems are experimentally available [29], we expect the present study to stimulate immediate attention to regulate the properties of semiconductor-supported topological materials via carrier doping, external strain, electrical and magnetic fields.…”
Section: Introductionmentioning
confidence: 98%
“…The QSHI phase shown in Fig. 1b was recently realized in indenene, where symmetry breaking is provided by a SiC substrate [28][29][30][31].…”
mentioning
confidence: 95%
“…By breaking either reflection symmetry, σ h or σ v , a ν = 1 QSHI phase can be reached: in the former case, the hybridization between the p z and the in-plane orbitals dominates over the SOC term along the nodal line, stabilizing an indenene-like QSHI phase (Fig. 1b) [31]. The other QSHI phase is characterized by a strong local orbital angular momentum polarization at the valley momenta, which gaps the in-plane Dirac bands (" σ v QSHI", Fig.…”
mentioning
confidence: 99%
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