Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Abstract

In this paper, AlGaN/GaN/AlGaN/GaN high electron mobility transistor (HEMT) with 0.25 um gatelength have been designed on an SIC-4H substrate. DC and Noise characteristics of AlGaN/GaN/AlGaN/GaN HEMT with 0.25 um gate-length at microwave frequencies have been explored. The simulation has been performed by using the Silvaco software. The extrinsic transconductance of the device was 350 ms/mm. Also, device exhibited current drive capability as high as 1750 ma/mm. The device has demonstrated high unity current gain cutoff frequency (ft) of 200 GHz. The microwave noise characteristics of the device were determined from 0 to 20 GHz at different drain biases and drain currents. At a gate bias of-3 V and drain bias of 10 V, device exhibited a minimum noise figure (NFmin) of 0.35 dB and maximum associated gain (Gma) of 24.35 dB at 10 GHz. The noise resistance of device is 7.2 ohm at 10 GHz, which is very suitable for low noise applications in X-band frequency range. These results indicates the capability of AlGaN/GaN HEMT for low noise and high power amplifiers.