Design and simulation of a high efficiency CdS/CdTe solar cell

Tinedert, Imad Eddine; Pezzimenti, F.; Megherbi, M.L.; Saadoune, A.

doi:10.1016/j.ijleo.2019.164112

Cited by 53 publications

(21 citation statements)

References 30 publications

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Section: Methodsmentioning

confidence: 99%

“…All simulations were executed under a constant light intensity of 0.1 W/cm 2 (AM) 1.5 at 300 K temperature. For all PV simulations, the bulk recombination time was set from 1 to 100 μs and the doping concentration in the solar cell was set in the range of 1 × 10 15 to 1 × 10 20 cm −3 as reported in previous research articles [44][45][46]. The layers in this solar cell were organized according to the energy bandgap, in which the layer with a lower bandgap was placed on the bottom, while the layer with a higher bandgap was placed on the top surface [36].…”

Section: Pc1d Modeling Toolmentioning

confidence: 99%

See 1 more Smart Citation

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

KC¹,

Shah

Akhtar

et al. 2021

Molecules

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This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

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Section: Methodsmentioning

confidence: 99%

Section: Pc1d Modeling Toolmentioning

confidence: 99%

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

KC¹,

Shah

Akhtar

et al. 2021

Molecules

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show abstract

“…Tinedert et al also found using Silvaco-Atlas simulation software that CdTe thicknesses lower than 2 µm strongly penalize the solar cell e ciency [8]. For CIGS absorber layers, the lower the thickness the higher the e ciency is.…”

Section: Impacts Of Doping Concentrations and Thickness Variations Of Buffer Layers And Absorber Layersmentioning

confidence: 99%

“…In the CdTe solar cell simulation study, Tinedert et al used Silvaco-Atlas simulation software to design and simulate a CdTe solar cell and obtained 23% e ciency using CdS 0.1 µm thick CdS layer [8]. Nykyruy et al simulated a 17.15% CdS/CdTe heterojunction solar cell using the SCAPS-1D software [9].…”

Section: Introductionmentioning

confidence: 99%

Simulation of CdTe, CIGS and CZTS Solar Cells using WxAMPS Software

Hashmi¹,

Hossain²,

Rashid³

2021

Preprint

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Solar cells made of Cadmium telluride (CdTe), copper indium gallium selenide (CIGS) and copper zinc tin sulfide (CZTS) are currently the most widely studied thin film technologies.To increase the performance and for better understanding of the behavior of CdTe, CIGS and CZTS solar cell simulations have been performed using WxAMPS software. Moreover, all the solar cells have been simulated with different buffer layers and transparent conductive oxide (TCO) layers such as Cadmium Sulphide (CdS), Zinc Sulphide (ZnS), Aluminum Zinc Oxide (AZO) and Indium Tin Oxide (ITO).Variations in the thickness and doping concentrations of TCO layers, buffer layers, and absorber layers have been done to test the performance of the solar cells.The effects of using a Back-Surface Reflector (BSR) layer made of Zinc Telluride (ZnTe) have also been studied.Furthermore, the simulation work is exceptional in this regard since all of the layers of CdTe, CIGS, and CZTS solar cells were modeled using optical parameters (absorption coefficients) from the literature. All the solar cell's open circuit voltage (Voc), short circuit current (Isc), maximum power (Pm), fill factor (FF), and photovoltaic efficiencies have been represented in this work. The simulation results may provide valuable insight in developing and better understanding of high-efficiency thin film solar cells.

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“…Over the last decades, photovoltaic energy has become one important contributor to the current energy production, around 1.7% of the world power supply [1]. Thin film solar cells based on CdTe, copper indium gallium selenide (CIGS) or amorphous silicon have been developed as a cheaper alternative to crystalline silicon cells [2][3][4][5][6][7]. On the other hand, tandem cells, or multi-junction cells, as they are also called, were originally used for spacecrafts, where materials such as gallium-arsenide (GaAs) and germanium (Ge) substrates were combined for the first time to achieve high efficiencies [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Improved design of InGaP/GaAs//Si tandem solar cells

2021

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Optimizing any tandem solar cells design before making them experimentally is an important way of reducing development costs. Hence, in this work, we have used a complete analytical model that includes the important effects in the depletion regions of the III-V compound cells in order to simulate the behavior of two and four-terminal InGaP/GaAs//Si tandem solar cells for optimizing them. The design optimization procedure is described first, and then it is shown that the expected practical efficiencies at 1 sun (AM1.5 spectrum) for both two and four-terminal tandem cells can be around 40% when the appropriate thickness for each layer is used. The optimized design for both structures includes a double MgF2/ZnS anti-reflection layer (ARC). The results show that the optimum thicknesses are 130 (MgF2) and 60 nm (ZnS), respectively, while the optimum InGaP thickness is 220 nm and GaAs optimum thickness is 1800 nm for the four-terminal tandem on a HIT silicon solar cell (with total tandem efficiency around 39.8%). These results can be compared with the recent record experimental efficiency around 35.9% for this kind of solar cells. Therefore, triple junction InGaP/GaAs//Silicon tandem solar cells continue being very attractive for further development, using high efficiency HIT silicon cell as the bottom sub-cell.

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Design and simulation of a high efficiency CdS/CdTe solar cell

Cited by 53 publications

References 30 publications

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Simulation of CdTe, CIGS and CZTS Solar Cells using WxAMPS Software

Improved design of InGaP/GaAs//Si tandem solar cells

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