Design and Simulation of High Efficiency Tin Halide Perovskite Solar Cell

Mandadapu, Usha; Vedanayakam, S. Victor; Thyagarajan, K.; Reddy, M Raja; Jagadeeshbabu, B

doi:10.20508/ijrer.v7i4.6182.g7270

Cited by 15 publications

(6 citation statements)

References 6 publications

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“…Next, the thickness of the CH 3 NH 3 SnI 3 -Perovskite layer was varied from 2.68 μm to 3.30 μm while keeping the thickness of the SnO 2 and CuSCN layers constant, and the maximum PCE was observed for this layer. Similarly, by keeping the thickness of the CH 3 NH 3 SnI 3 -Perovskite and SnO 2 layers constant, the thickness of the CuSCN layer was varied between 0.05 μm and 0.08 μm, and the maximum PCE was observed for this layer [ 28 , 29 ]. Finally, we simulated the optimized results for the ITO/SnO 2 /CH 3 NH 3 SnI 3 /Mo solar cell structure using the optimized values of all layers [ 30 , 31 ].…”

Section: Numerical Simulations and Methodologymentioning

confidence: 99%

Development of low-cost and high-efficiency solar modules based on perovskite solar cells for large-scale applications

Hanif,

Qasim,

Malik

et al. 2024

Heliyon

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Section: Numerical Simulations and Methodologymentioning

confidence: 99%

Development of low-cost and high-efficiency solar modules based on perovskite solar cells for large-scale applications

Hanif,

Qasim,

Malik

et al. 2024

Heliyon

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“…Table III shows the structure and parameters of the devices used in the simulation. [45][46][47][48][49][50][51][52] As referenced by the report in Ref. 23, interface layers were set on both sides of the perovskite layer.…”

Section: Device Simulation By Scapsmentioning

confidence: 99%

“…Table III. Device simulation model for SCAPS and material parameters [45][46][47][48][49][50][51][52] an energy spike appears and efficiency is maximized when the electron affinity of AlGaN is less than 3.2 eV. In the case of perovskite materials with other energy bands, it is expected that the efficiency will increase by adjusting the Al composition of AlGaN.…”

Section: Device Simulation By Scapsmentioning

confidence: 99%

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Hombe

Saiki

Mori

et al. 2023

Jpn. J. Appl. Phys.

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Perovskite solar cells are expected to be applied as photoreceivers for high-efficiency optical wireless power transfer for electric vehicles. The use of Aluminium gallium nitride (AlGaN) as an electron transport layer (ETL) for wide-gap perovskite solar cells is hereby proposed. The electrical properties and energy band alignment of AlGaN deposited by either hydride vapor phase epitaxy or metal-organic chemical vapor deposition are investigated in this paper. AlGaN shows a higher conduction band level than conventional ETL materials. Simulation of the performance of a perovskite solar cell with CH3NH3PbBr3 as the absorbing layer and AlGaN as the ETL was performed using a solar cell capacitance simulator. The results suggest that AlGaN increases the power conversion efficiency of the solar cell by improving the conduction band offset between the perovskite layer and the ETL.

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“…The reduction in efficiency caused by a rise in temperature is due to an increase in the rate of recombination and ohmic resistance due to induced stress, which will ultimately reduce count of charge carriers and enhance mobility. Series resistance (RS) increases with temperature because diffusion length influences it as the result PCE and FF get decreased (Mandadapu et al 2017;Yadav et al 2022). With the increment in temperature, VOC falls down from 1.1V to 0.91V, FF from 86.62% to 51.55%, and PCE from 24.69% to 19.29%.…”

Section: Impact Of Varying the Temperature Of Solar Cellmentioning

confidence: 99%

STO-Enabled Double Perovskite Solar Cell Incorporating (FA) 2 BiCuI 6 as Absorber Material Without HTL

Yadav,

Lohia,

Sahu

2023

Preprint

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In this study, an environmental friendly heterostructure perovskite solar cell is constructed using non-toxic, lead-free double perovskite material (FA)2BiCuI6 as an active layer. The proposed device architecture is FTO/STO/(FA)2BiCuI6/GO/Pd. An extensive theoretical analysis and optimization is conducted using SCAPS-1D simulation tool. The thickness of absorber layer, shallow acceptor density, back metal contact and operating temperature are varied to optimize performance parameter of device. Optimized results have been observed at 700 nm absorber thickness for shallow acceptor density 1.0 × 1019 cm− 3 and 300 K operating temperature. A small value of series resistance 1 Ω cm2 along with high shunt resistance 100000 Ω cm2 is incorporated from the initial condition. The solar cell characteristics obtained are as open circuit voltage 1.10 V, short circuit current density 26.03 mA/cm2, fill factor 86.62 %, and device power conversion efficiency 24.69 %. The study concludes that the metal-work function can be carefully modulated to further enhance the performance characteristics of a device. Further current density–voltage characteristics (J-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) characteristics have also been studied to explore the electrical characteristics of device. These findings suggest that a thorough analysis of materials could lead to their potential use as a high-performance active material for solar applications.

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Design and Simulation of High Efficiency Tin Halide Perovskite Solar Cell

Cited by 15 publications

References 6 publications

Development of low-cost and high-efficiency solar modules based on perovskite solar cells for large-scale applications

Development of low-cost and high-efficiency solar modules based on perovskite solar cells for large-scale applications

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

STO-Enabled Double Perovskite Solar Cell Incorporating (FA) 2 BiCuI 6 as Absorber Material Without HTL

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