Design and Simulation of InGaN<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:mi>p</mml:mi></mml:mrow></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M2"><mml:mrow><mml:mi>n</mml:mi></mml:mrow></mml:math>Junction Solar Cell

Mesrane, A.; Rahmoune, F.; Mahrane, Achour; Oulebsir, A.

doi:10.1155/2015/594858

Cited by 41 publications

(23 citation statements)

References 15 publications

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“…as the quasi Fermi levels of both electrons and holes lay in the middle of the InGaN bandgap at 0 V. This important value (n i ) can be calculated according to [43] and as a function of the band gap:…”

Section: Numerical Results-rgb Wavelength Optimizationmentioning

confidence: 99%

“…As mentioned above, the InGaN emitting layer is an intrinsic material where:

as the quasi Fermi levels of both electrons and holes lay in the middle of the InGaN bandgap at 0 V. This important value (n i ) can be calculated according to [ 43 ] and as a function of the band gap:

where:

and

are the effective densities of states in the conduction and valence bands;

is the band gap;

is Boltzmann’s constant;

is the lattice temperature. …”

Section: Numerical Results—rgb Wavelength Optimizationmentioning

confidence: 99%

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Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)

2020

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A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LENS (Light Emitting Nano-pixel Structure), is a new nano-pixel structure designed to enable high-resolution display. It serves as the building block of a more complex structure called LENA (Light Emitting Nano-pixel Array), dedicated to nano-display applications, such as augmented and virtual reality (AVR). Previously designed and studied with a platform for ray tracing optimization, a complementary simulations study was performed using the Comsol Multi-Physics Platform in order to check for opto-electronics performance and physical nanoscale investigations. In addition to the physical complementary analysis, several studies have focused on optimizations: optimal geometry for a pixel (cylindrical or conical shape), and wavelength adaptation (optical communication). In addition to numerical simulation results, an analytical model has been developed. This new device holds the potential to enhance the light efficiency for military, professional and consumer applications, and can serve as a game changer in the world of nano-displays with high resolution.

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Section: Numerical Results-rgb Wavelength Optimizationmentioning

confidence: 99%

“…As mentioned above, the InGaN emitting layer is an intrinsic material where:

where:

and

are the effective densities of states in the conduction and valence bands;

is the band gap;

is Boltzmann’s constant;

is the lattice temperature. …”

Section: Numerical Results—rgb Wavelength Optimizationmentioning

confidence: 99%

Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)

2020

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“…Since this study is the first presenting an approach to the behavior of a GaN/GaAs heterostructure as photovoltaic device, it is not possible to compare the obtained results with some solar cell of this type previ- [23] in p-n type cells; while cells based on GaAs have reported efficiencies between 17% and ~ 24% [24]. These values serve as a guideline for considering acceptable the results obtained in this study and allow demonstrating the potential of a GaN/GaAs heterostructure by introducing efficiencies above those previously reported for cells based on GaN and GaAs separately in multijunction devices with the advantage that this study shows this efficiencies for a single heterojunction solar cell.…”

Section: Discussionmentioning

confidence: 99%

Theoretical study of c-GaN/GaAs single heterojunction solar cells

et al. 2017

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In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) were obtained for n-i-p and n-p heterostructures with different thicknesses and doping of the layers by modeling heterostructures with characteristics parameters of this materials previously reported. As a result, an increment on Isc was observed by extending the thickness of i-GaAs layer from 12 mA/cm 2 for thinner heterostructures to a maximum of ~32 mA/cm 2 for heterostructures with i-GaAs layer >3000 nm and a decrease in Voc and FF in the range from ~1.06 V and 0.89 for n-p heterostructures to 0.75 V and 0.7 respectively for thicker i-GaAs layers allowing estimate maximum efficiencies between 23 and 25% for n-i-p and n-p configurations, respectively. This study allows demonstrating the potential of this type of heterostructures for solar cells applications, considering the possibility of using p-doping GaAs substrates for photovoltaics based in GaN.

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“…The unintentionally doped InGaN segments of the u-InGaN/p-GaN NWs were assumed to have an n-type background doping level of 5 × 10 16 cm -3 , whereas the doping level of the p-type GaN seeds was in accordance with the Mott-Schottky results. Other physical parameters in the PC1D model were either extracted from the literature [27][28][29][30][31][32][33] or specified from the SEM and PL results.…”

Section: Methodsmentioning

confidence: 99%

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

et al. 2019

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InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs. With the carrier concentrations estimated by Mott-Schottky measurements, a PC1D simulation further confirmed the band structures of the three heterojunctions. The u-InGaN/p-GaN and p-InGaN/p-GaN NWs exhibited optimized stability in pH 0 electrolytes for over 10 h with a photocurrent density of about -4.0 and -9.4 mA/cm 2 , respectively. However, the hydrogen and oxygen evolution rates of the Pt-treated u-InGaN/p-GaN NWs exhibited a less favorable stoichiometric ratio. On the other hand, the Pt-decorated p-InGaN/p-GaN NWs showed the best PEC performance, generating approximately 1000 µmol/cm 2 hydrogen and 550 µmol/cm 2 oxygen in 10 h. The band-engineered p-InGaN/p-GaN axial NWsheterojunction demonstrated a great potential for highly efficient and durable photocathodes.

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Design and Simulation of InGaNp-nJunction Solar Cell

Cited by 41 publications

References 15 publications

Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)

Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)

Theoretical study of c-GaN/GaAs single heterojunction solar cells

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

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