Design and simulation of two-dimensional (2D) Gallium Nitride (GaN) photonic crystal on sapphire

Zamani, Nur Dalila Mohd; Nawi, Mohd Nuriman; Shaari, Sahbudin; Majlis, Burhanuddin Yeop; Zain, Ahmad Rifqi Md

doi:10.1109/icp.2018.8533165

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2020

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“…However, the ability to get the high Q factor value for microcavity device structures is characteristically specified as the ratio Q / V is Purcell factor ( F p ), where Q is the factor and confinement of light in small modal volume ( V ) and EM resonant modes. 28,29,30 The higher Q factor as the longer cavities or the field at the edge were given when scattering happens is decreased while V leads to a small for the Q / V ratio.…”

Section: Introductionmentioning

confidence: 99%

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Zamani

Nawi

Berhanuddin

et al. 2020

Nanomaterials and Nanotechnology

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In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.

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Section: Introductionmentioning

confidence: 99%