Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode

Hussain, S.; Zerin, Tasnim; Khan, M.A.

doi:10.1007/s12200-017-0705-9

Cited by 2 publications

(1 citation statement)

References 40 publications

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“…2. We have made a comparative study, like to that we did for green emission from GaN/InxGa1-xN/AlyGa1-yN on sapphire substrate [34] and tried to adjust the thickness of epilayers and composition of QW and cap layer to find out the best structural parameters with a much higher intensity of red emission.…”

Section: Modeling the Light Emitting Diode (Led) Structurementioning

confidence: 99%

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Hussain¹,

Rahman²,

Prodhan³

2020

SPQEO

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An In0.17Ga0.83N light emitting diode (LED) structure on ScAlMgO4 (0001) substrate is modeled for high intensity red emission. The high indium composition (In > 15%) inside the c-plane polar quantum well (QW) for longer wavelength emission degrades the structural and optical properties of LEDs because of induced strain energy and quantum confinement Stark effect. To compensate these effects, it has been demonstrated by simulation that an AlyGa1–yN cap layer of 2 nm thick and Al composition of 17% deposited onto QW of 3 nm thick and In composition of 35% will allow to have less defect density and higher intensity red emission at 663 nm than that of In0.17Ga0.83N/InxGa1–xN LEDs grown on ScAlMgO4 (0001) substrate. This LED structure has perfect in-plane equilibrium lattice parameter (αeq = 3.249 Å) and higher logarithmic oscillator strength (Γ = –0.93) values.

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Section: Modeling the Light Emitting Diode (Led) Structurementioning

confidence: 99%

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Hussain¹,

Rahman²,

Prodhan³

2020

SPQEO

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Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission

Tithy,

Hussain

2023

SPQEO

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To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.

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Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AlGaN light emitting diode

Cited by 2 publications

References 40 publications

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission

Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission

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