Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Lv, Liang; Yu, Jun; Hu, Man; Yin, Siqi; Zhuge, Fuwei; Ma, Ying; Zhai, Tianyou

doi:10.1039/d1nr00318f

Cited by 40 publications

(23 citation statements)

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“…[5][6][7] For these devices, in addition to their semiconductor characteristics, the quality of the contact interface, such as the semiconductorsemiconductor or metal-semiconductor interface, is the main factor that restricts the working performance. [8,9] Improving the quality of the interface not only helps to reduce the noise current caused by carrier drift in the dark state but also promotes the directional separation of photogenerated carriers, which can increase the working efficiency of the photodetector. Si has been the most important semiconductor in the 21st century, and there is a growing demand for high-performance Si-based photodetectors, which have good commercial prospects.…”

Section: Introductionmentioning

confidence: 99%

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Chang

Zhou

Wang

et al. 2022

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The traditional methods for preparing high-quality interfaces on Si include magnetron sputtering, [12] pulsed laser deposition, [13] chemical vapor deposition, [14] and metalorganic chemical vapor deposition, [15] in which the growth rates of the materials are low. Because these methods require not only strict lattice matching between the deposit and the substrate, stringent conditions, including an appropriate temperature and O 2 pressure, are needed. In recent years, laser-annealing technology has been widely used for the large-scale production of semiconductor devices. [16,17] Using the heat generated by infrared light, materials under irradiation were crystallized in situ and underwent phase transitions, and high-quality interfaces were constructed. For example, organic-inorganic hybrid perovskite materials prepared via light annealing have advantages over those prepared via traditional thermal annealing, including a higher crystallinity and better compatibility with the substrate. [18] More importantly, the illumination can be easily manipulated. In addition to the irradiation of large-area samples, regional irradiation can be performed, allowing the fabrication of large-area or array photodetectors.In this study, a high-quality Se/Si interface was constructed via in situ transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate surface via light annealing. Under infrared irradiation, an upward decreasing heat field was formed on the Si surface, and then a-Se began to crystallize along the c-axis direction from the interface. Eventually, a high crystallinity t-Se film was obtained on a Si substrate with an excellent Si-Se interface. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the Se/Si device exhibited an extremely high sensitivity and ultrafast response under both visible and infrared light. In addition, through precise regional light annealing, an image sensor was prepared with the ability to recognize the designed patterns. Results and DiscussionFigure 1a shows a schematic of the t-Se/Si photodetector, and the fabrication process is described in the Experimental Section. X-ray diffraction (XRD) characterisation was performed to identify the crystal structure and phase composition of the synthesised composite, as shown in Figure 1b. Before deposition, only one peak at 69.5° was observed, corresponding to the Si (4 0 0) plane (JCPDS 78-2500). After a-Se was deposited onThe quality of the interface, e.g., the semiconductor-semiconductor or metalsemiconductor interface, is the main factor restricting the photodetection performance of a heterojunction. In this study, a high-quality Se/Si interface is constructed via in situ directional transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate via light annealing. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the t-Se/Si heterojunction exhibits an extremely high responsivity and detectivity of 583.33 mA W −1 and 8.52 × 10...

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Section: Introductionmentioning

confidence: 99%

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Chang

Zhou

Wang

et al. 2022

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“…Over the past decade, two-dimensional (2D) materials have demonstrated novel and intriguing optoelectronic properties, including ultrafast mobility, broadband absorption, strong nonlinear response and dangling-bond-free surface, exhibiting great potential for both electronic and optoelectronic devices. [1][2][3][4][5][6][7][8][9][10] Especially, integrating 2D materials with silicon integrated photonic circuits is a highly promising application. A plethora of waveguide-integrated 2D materials optoelectronic devices, including light sources, 11,12 switches, 13 polarizers, 14 modulators 15,16 and photodetectors, [17][18][19] have already been realized.…”

Section: Introductionmentioning

confidence: 99%

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Zhong

et al. 2022

Preprint

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Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.

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“…Van der Waals (vdW) materials, such as graphene, semiconducting transition metal dichalcogenides, and hexagonal boron nitride (hBN), have received considerable attention owing to their possible applications in ultrathin, flexible, and transparent electronic and optoelectronic devices. [1][2][3][4] In particular, vdW heterostructures, in which different vdW materials are vertically stacked, have been extensively studied to develop multifunctional devices. [5][6][7] For example, various hybrid heterostructures, such as PtS2/h-BN/graphene, 8 graphene/hBN/MoS2, 9 MoS2/hBN/grahene or MoS2, 10 and graphene/hBN/ReSe2 11 exhibit multibit optoelectronic nonvolatile memory effects.…”

Section: Introductionmentioning

confidence: 99%

Rectifying optoelectronic memory based on WSe₂/graphene heterostructures

et al. 2021

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Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Abstract: Owing to their superior carrier mobility, strong light-matter interaction, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interests in electronic and optoelectronic devices, including rectifying...

Cited by 40 publications

References 345 publications

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Rectifying optoelectronic memory based on WSe₂/graphene heterostructures

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Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Abstract: Owing to their superior carrier mobility, strong light-matter interaction, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interests in electronic and optoelectronic devices, including rectifying...

Cited by 40 publications

References 345 publications

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Constructing a High‐Quality t‐Se/Si Interface Via In Situ Light Annealing of a‐Se for a Self‐Powered Image Sensor

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Rectifying optoelectronic memory based on WSe2/graphene heterostructures

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Resources

About

Rectifying optoelectronic memory based on WSe₂/graphene heterostructures