Design and testing of the World's first single-level press-pack IGBT based submodule for MMC VSC HVDC applications

Chen, Huifeng; Cao, Wenping; Bordignon, P.; Rong, Yi; Zhang, Haitao; Shi, Wei

doi:10.1109/ecce.2015.7310134

Cited by 32 publications

(14 citation statements)

References 4 publications

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“…Other benefits of PP‐IGBT include high‐power density or current capability due to double‐side cooling and low conduction losses. Consequently, the PP‐IGBT devices will be the ultimate choice for high‐power high‐reliability power electronic systems such as HVDC transmission which have the least tolerance on interruption [1]. In this work, the 4.5 kV/3 kA PP‐IGBT T2960BB45E and 4.5 kV/4 kA press‐pack diode E4000FD45E are selected for the stack design [5].…”

Section: Designmentioning

confidence: 99%

“…By measuring and recording coolant flow rate, inlet and outlet temperatures, the total losses of the stack can be calculated. Furthermore, average junction temperature of PP‐IGBT can be derived using a thermal equivalent circuit, if both its electrodes' temperatures are measured as well [1].…”

Section: Testingmentioning

confidence: 99%

“…It is also considered as one of backbone technologies to harvest offshore renewable energy, which will be important for future low‐carbon economy. This is due to advantages of VSC HVDC technologies, including grid access of weak AC networks, the fast and independent control of active and reactive power, the supply of passive networks, and black start capability [1].…”

Section: Introductionmentioning

confidence: 99%

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Design, analysis, and testing of PP‐IGBT‐based submodule stack for the MMC VSC HVDC with 3000 A DC bus current

Chen¹,

Wakeman²,

Pitman³

et al. 2019

J. eng.

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Section: Designmentioning

confidence: 99%

Section: Testingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design, analysis, and testing of PP‐IGBT‐based submodule stack for the MMC VSC HVDC with 3000 A DC bus current

Chen¹,

Wakeman²,

Pitman³

et al. 2019

J. eng.

Self Cite

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“…The popularity of voltage‐source converter high‐voltage direct current (VSC‐HVDC) power transmission technology is increasing due to its flexibility, controllability and efficiency [1, 2]. In the VSC‐HVDC systems, self‐commutating devices are required [3, 4].…”

Section: Introductionmentioning

confidence: 99%

Partial discharge measurement and analysis in PPIs

Zhao

et al. 2019

IET Power Electronics

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Electrical insulation capability is one of the most critical challenges for press-pack insulated gate bipolar transistors (IGBTs), but the knowledge of its insulation failure mechanism is much less mature. To understand the insulation failure mechanism, partial discharge (PD) measurement and analysis in press-pack IGBT (PPI) submodule were performed in this study. A dedicated PD measurement system for PPIs was designed and fabricated, and fast oscilloscope, PD detector and ultraviolet (UV) image camera were employed to observe the PD. PD-induced insulation failure phenomenon in the submodule was observed under direct current voltage, and UV images indicated that the discharge occurred at the periphery of the die. Phase-resolved PD (PRPD) analysis method for PPIs was developed and three elementary structures were used to simulate the PD in the electric field reinforcement areas identified by electric field analysis. According to PRPD patterns, the observed PD in the submodule was considered to be mainly caused by a mismatch between the electric field and critical electric field on the surface of passivation layers of the die. The inference was verified at different gas pressures because a decrease of PD inception voltage in the submodule and the bare die was observed at lower gas pressure.

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“…High Voltage Direct Current (HVDC) converters rely on the series connection of many power modules. To prevent the failure of a single module from stopping the operation of a whole converter, a fail-to-short behavior is expected [1], so that the failing power modules basically "disappear" from the series string. Fail-to-short power modules have been demonstrated for silicon devices [2], [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Dchar¹,

Buttay²,

Morel³

2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

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Design and testing of the World's first single-level press-pack IGBT based submodule for MMC VSC HVDC applications

Cited by 32 publications

References 4 publications

Design, analysis, and testing of PP‐IGBT‐based submodule stack for the MMC VSC HVDC with 3000 A DC bus current

Design, analysis, and testing of PP‐IGBT‐based submodule stack for the MMC VSC HVDC with 3000 A DC bus current

Partial discharge measurement and analysis in PPIs

Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

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