Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation

Wang, Xiaodong; Hou, Liwei; Xie, Wei; Chen, Xiaoyao; Pan, Ming

doi:10.1007/s11082-014-0064-3

Cited by 22 publications

(2 citation statements)

References 19 publications

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“…Such impurity-band formation is a basic effect that occurs whenever a defect level is present at sufficient density. The formation of an impurity band is widely applied in blocked-impurity-band devices, where a heavilybut not degeneratelydonor-doped layer creates an impurity band; this region is used as an infrared-active layer in IR photo detectors, where an incoming photon lifts an electron from the impurity band to the conduction band (Haegel et al 2003, Wang et al 2015).…”

Section: 2mentioning

confidence: 99%

Carrier Transport Induced and Controlled by Defects

Böer¹,

Pohl²

2017

Semiconductor Physics

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Section: 2mentioning

confidence: 99%

Carrier Transport Induced and Controlled by Defects

Böer¹,

Pohl²

2017

Semiconductor Physics

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“…THz broadband detectors based on thermal effect, such as the Golay Cell and bolometer, are limited by slow response speed [6,7]. Blocked-impurity-band (BIB) detectors used for 1-15 THz face the problem of high purity requirement, passivation, and reproducibility [8,9]. In recent years, two-dimensional materials have attracted broad attention in broadband detector studies.…”

Section: Introductionmentioning

confidence: 99%

E-shaped patch antenna for GaAs-based broadband THz detectors

Lian¹,

Wang²,

Bai³

et al. 2022

J. Phys. D: Appl. Phys.

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High-performance broadband Terahertz (THz) photodetectors are of great interest driven by lots of applications. To improve the performance of the THz photodetector in a wide spectral coverage, the E-shaped patch antenna with three slots is proposed and studied in theory. GaAs-based homojunction interfacial work function internal photoemission (HIWIP) broadband THz detector is used as an example to demonstrate the effect in broadband detection. Due to the combined effect of the antenna and the microcavity, E-shaped patch antenna microcavity HIWIP increase the optical coupling efficiency in a broadband range from 2.1-20 THz by an average of four times. Considering the requirement to reduce the dark current, the etched E-shaped patch antenna microcavity HIWIP only retaining the active region beneath the antenna is further investigated. In contrast to the reference HIWIP, the coupling efficiency is improved by an average of 15 times in 2.3-20 THz. The high coupling efficiency of both structures leads to the significant improvement of the responsivity, NEP, and detectivity in a wide spectral coverage theoretically, which makes it possible to realize higher operating temperatures. Such a design scheme of E-shaped patch antenna structure provides a guideline for broadband THz detectors and can be used for other THz detectors.

show abstract

Carrier Transport Induced and Controlled by Defects

Böer¹,

Pohl

2023

Semiconductor Physics

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Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation

Cited by 22 publications

References 19 publications

Carrier Transport Induced and Controlled by Defects

Carrier Transport Induced and Controlled by Defects

E-shaped patch antenna for GaAs-based broadband THz detectors

Carrier Transport Induced and Controlled by Defects

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