Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

Abstract

We present a study on the improvement of quality factors (Q-factors) of III-nitride-based two-dimensional photonic crystal (2D-PhC) nanocavities. Although III-nitride-based 2D-PhC cavities have been studied for long time, they typically show relatively low experimental Q-factors due to disorders inevitably introduced during the fabrication processes. In order to realize high-Q-factors, it is necessary to introduce cavities that are tolerant to disorder. We numerically reproduce the experimental found disorder in simulations, and discuss the influence of disorder on Q-factors of several types of cavities. We demonstrate the suitability of these cavities for the realization of high-Q-factors, and show which structures have the largest tolerance for disorders.

Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor

“…The well-developed GaN semiconductor platform allows integration of Ln ions into more complex devices, which holds the promise of unlocking new opportunities for the advancement of quantum technologies. 33) Nevertheless, despite the fact that Ln-doped GaN materials and devices have been studied for more than two decades, 27) only a limited number of studies have been conducted on the optical coupling of Ln ions to GaN nanostructures 34,35) and PhC nanocavities [36][37][38] for the purpose of enhancing the photon emission rate and the photon extraction efficiency.…”