and high damage threshold. However, the high refractive index contrast results in low number of distributed Bragg reflector (DBR) pairs and, consequently, constant value of high negative GDD can be hard to achieve over a broad band (around 10 nm near the 1-µm wavelength) with such mirrors. On the other hand, semiconductor chirped mirrors have lower refractive index contrast and, thus, require more DBR pairs, which allows to provide better separation of reflection of different wavelengths and makes it easier to tune constant negative GDD over a broader band. In our previous works [4][5][6] we have demonstrated tunable semiconductor double-chirped mirrors with negative dispersion for applications in femtosecond lasers operating near 1 µm. We have fabricated them using arsenide-based molecular beam epitaxy (MBE), and with intentionally introduced layer thickness spatial gradient, we were able to make the mirror properties (reflectivity and dispersion) tunable over an 80-nm range across the mirror surface. We demonstrated tunable mode-locked femtosecond operation of an Yb:KY(WO 4 ) 2 diode-pumped laser oscillator at the 1035-nm wavelength.We obtained negative group-delay dispersion (GDD), necessary for the femtosecond laser operation in the soliton regime, by using a double chirp of the mirror stack that resulted in different wavelengths being reflected at different depths within the semiconductor stack. In our mirror design, we followed classical approach, using an analytical formula [7]. However, to apply this formula we had to make a number of approximations [8], which resulted in a non-optimal mirror design. Hence, we have decided to focus our research on using exact numerical solutions of Maxwell equations and to perform computer optimization in order to achieve a structure with lower mean GDD spanning over a wider bandwidth with reduced oscillations.
AbstractGenetic algorithm was applied for optimization of dispersion properties in semiconductor Bragg reflectors for applications in femtosecond lasers. Broadband, large negative group-delay dispersion was achieved in the optimized design: The group-delay dispersion (GDD) as large as −3500 fs 2 was theoretically obtained over a 10-nm bandwidth. The designed structure was manufactured and tested, providing GDD −3320 fs 2 over a 7-nm bandwidth. The mirror performance was verified in semiconductor structures grown with molecular beam epitaxy. The mirror was tested in a passively mode-locked Yb:KYW laser.