This paper presents improved parylene-packaged thin-film transistors. Several spin-cast dielectrics were investigated to improve the surface roughness of parylene. The corresponding mobility and performance of pentacene thin film transistors were also reported. The relation between pentacene grain sizes and roughness of surfaces where pentacene grows were also investigated. To further improve the mobility, micromachined shadow masks made of silicon and parylene were employed to define the source and drain contacts. The improved pentacene thinfilm transistor has a mobility of 0.2 cm 2 /V-s and an on/off ratio of 10 4 .