Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

Mustafa, Farahiyah; Parimon, Norfarariyanti; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul; Osman, Mohd Nizam

doi:10.1016/j.spmi.2009.10.011

Cited by 12 publications

(21 citation statements)

References 13 publications

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“…GaAs is a semiconducting material having great technological importance [5][6][7]. However, its primary limitation in device technology is due to the presence of chemically unstable native oxide layers, which causes high surface and interface states [8,9].…”

Section: Introductionmentioning

confidence: 99%

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

et al. 2015

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Schottky contacts of Au/n-GaAs diodes with and without organic interlayer were fabricated. The roomtemperature I-V and C-V characteristics were analyzed in both forward and reverse bias conditions. The forward current followed thermionic emission, whereas the reverse current followed tunneling mechanism. The barrier height of the modified structure revealed an enhancement due to organic interlayer compared to the pure diode. The increment was explained on the basis of organic interlayer-induced dipole at the interface. The modification was also found to passivate the GaAs surface and reduce the reverse leakage current.

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Section: Introductionmentioning

confidence: 99%

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

et al. 2015

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“…The dimension of the gap, a and width, b for CPW determined by the Wheeler’s equation [ 34 ] are chosen to be 60 μm and 90 μm, respectively, in order to produce the characteristic impedance, Z o of 50 Ω. This CPW dimensions are similar to the proposed antenna structures [ 3 ] where it can make the direct integration without insertion of matching circuit possible. The CPW structure also permits direct injection of RF signal through Cascade G-S-G Infinity-150 microprobers.…”

Section: Design and Fabrication Of The Schottky Diodementioning

confidence: 99%

“…To achieve high cut-off frequency, the Schottky contact area needs to be small since the cut-off frequency of Schottky diode increases with the decrease of contact area. The detail discussion on the cut-off frequency of the fabricated diode can be found in [ 3 ]. Shorter CPW length is chosen in order to omit any matching circuit for the direct integration.…”

Section: Design and Fabrication Of The Schottky Diodementioning

confidence: 99%

“…Ideally, such a III–V semiconductor chip should be placed on a Si platform. Recently, we reported the proposal of direct integration of an antenna and a Schottky diode for a RF power detector as well as a rectenna ( rec tified an tenna ) device application to supply direct current (DC) power to generate other on-chip nanodevices [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

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Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Hashim

Mustafa

Rahman

et al. 2011

Sensors

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A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

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“…Based on the design and obtained results of the dipole antenna presented before and Schottky diode presented in Ref. [10], it is expected that direct integration via short CPW transmission line between dipole antenna and Schottky diode can be achieved without any matching circuit. For this purpose the behavior of the dipole antenna and Schottky diode have to be modeled at and around the operating frequency.…”

Section: Integration Of Dipole Antenna and Schottky Diodementioning

confidence: 99%

Fabrication and Characterization of Planar Dipole Antenna Integrated with GaAs Based-Schottky Diode for On-chip Electronic Device Application

Mustafa

Hashim

Parimon

et al. 2011

IOP Conf. Ser.: Mater. Sci. Eng.

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The design and RF characteristics of planar dipole antennas facilitated with coplanar waveguide (CPW) structure on semi-insulated GaAs are performed and confirmed to work in super high frequency (SHF) range. As expected, the fundamental resonant frequency shifts to higher frequency when the length of antenna decreases. Interestingly, the resonant frequencies of antenna are almost unchanged with the variation of antenna width and metal thickness. It is shown experimentally that return loss down to -54 dB with a metal thickness of 50 nm is obtainable. Preliminary investigation on design, fabrication, and DC and RF characteristics of the integrated device (planar dipole antenna + Schottky diode) on AlGaAs/GaAs HEMT structure is presented. From the preliminary direct irradiation experiments using the integrated device, the Schottky diode is not turned on due to weak reception of RF signal by dipole antenna. Further extensive considerations on the polarization of irradiation etc. need to be carried out in order to improve the signal reception. These preliminary results provide a new breakthrough for on-chip electronic device application in nanosystems.

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Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

Cited by 12 publications

References 13 publications

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Fabrication and Characterization of Planar Dipole Antenna Integrated with GaAs Based-Schottky Diode for On-chip Electronic Device Application

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