Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes

Abstract

Two silicon-based ultraviolet (UV) and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor (CMOS) process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.

Hydrogen gas sensors based on electrostatically spray deposited nickel oxide thin film structures

“…Electrical resistivity of NiO thin films was studied by many researchers [22][23][24][25][26], and reported resistivity was in the range of 10 Ω⋅cm -10 6 Ω⋅cm. Table 1 shows the Hall effect measurement data of NiO films at 400 ℃ temperature.…”

A novel integrated ultraviolet photodetector based on standard CMOS process

“…Electrons, which are driven by a built-in electric field due to the nonuniform doping profile, enter the high-field region of the p + -n junction at a depth of 140 nm and form the electronic diffusion current. [16] To gather most UV information assimilated by the upper P + -N well junction, which is due to the complete overlap of the lateral space depletion region between two P + anodes. Parameters d and w are chosen to be 3.0 µm and 3.86 µm, respectively.…”

Characteristics of heat-annealed silicon homojunction infrared photodetector fabricated by plasma-assisted technique

“…The junction is termed as abrupt or graded, depending upon whether the impurity concentration in the material changes abruptly or gradually at the junction region [1,2]. When two layers of semiconductor materials of opposite carrier types are intimately joined, an exchange of charge carriers takes place, and the Fermi level becomes continuous in both layers [3]. Electrons from n-type portion adjacent to the junction flow into the p-side while holes from p-type to n side, and this flow is due to the density gradient.…”