2022
DOI: 10.33180/infmidem2022.202
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Design, Fabrication and Measurement of LDNMOSSCR Devices with Appropriate ESD Protection Window for 18V HV CDMOS Process

Abstract: Lateral Double Diffused MOSFET (LDMOS) embedded Silicon Controlled Rectifier (SCR) is a normal way to improve the Electro-Static Discharge (ESD) robustness for smart power technologies, but it doesn't always have the proper ESD window for a given application. In this paper, LDNMOS-SCR of four variants structures have been investigated based on a high-voltage (HV) 0.5μm 18V HV CDMOS process with 2D device simulation and silicon verification. Transmission Line Pulse (TLP) testing results demonstrated that those … Show more

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