Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Vignetti, Matteo; Calmon, Françis; Cellier, Rémy; Pittet, Patrick; Quiquerez, L.; Savoy-Navarro, A.

doi:10.1016/j.mejo.2015.07.002

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…This proves that the DN-Well dummy guard ring prevents edge breakdown. This is the premise of the device working in Geiger mode [24]. When a photon is absorbed by a photogate or a PN junction formed by P+/N-Well, electrons in the valence band absorb the photon energy and then transition to the conduction band to form electron-hole pairs.…”

Section: Principle Of the Ep-spad Devicementioning

confidence: 99%

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

et al. 2022

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Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit design more difficult. Therefore, the modeling of RTS noise in SPAD devices is of great significance for the design of signal processing circuits. However, RTS noise is not included in the traditional equivalent circuit model. In response to the above problems, this paper implements an equivalent circuit model with RTS noise based on the Cadence. The model is built based on the basic components in the library, and it has strong application universality. The model is validated in a novel embedded photogate SPAD device (EP-SPAD). It accurately simulates the RTS noise and IV characteristics of the EP-SPAD device. In addition, the threshold voltage of EP-SPAD device operating in Geiger mode is precisely defined based on the characteristics of RTS noise. When the reverse bias voltage is increased from 0 V to 15 V, the IV characteristics of the model are consistent with the EP-SPAD device.

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Section: Principle Of the Ep-spad Devicementioning

confidence: 99%

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

et al. 2022

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“…Then, they randomly hit the lattice to generate new carriers, in a process called impact ionization. At this time, both the original carrier and the newly generated carrier will undergo impact ionization [10][11][12]. This makes the number of carriers increase sharply, and the output current of the device increases.…”

Section: Introductionmentioning

confidence: 99%

A simple Monte Carlo model for performance optimization of single photon avalanche diode

Yang,

Wang,

Zhou

et al. 2023

Phys. Scr.

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Single photon avalanche diode (SPAD) has the advantage of high internal gain, which is widely used in fluorescence detection and quantum communication. The high internal gain of the device is mainly due to avalanche multiplier effect. Therefore, it is of great significance to study avalanche multiplication effect for the design and performance optimization of SPAD devices. In this paper, a Simple Monte Carlo (SMC) model is implemented based on MATLAB, which includes interval phonon scattering and impact ionization of carriers. In this model, the electric field at different reverse bias voltages is extracted based on Technology-Computer- Aided- Design (TCAD). The model simulates the energy, velocity and impact ionization of carriers in the depletion region. The model has been verified on SPAD devices fabricated by 0.18um Bipolar - Complementary Metal Oxide Semiconductor - Diffused Metal Oxide Semiconductor (BCD) process. The SMC model simulates the dependence of the avalanche multiplication gain and excess noise factor of the SPAD device on the reverse bias voltage. In addition, the SMC model estimates the current-voltage (IV) characteristics and avalanche breakdown voltage of the device. In conclusion, the SMC model can provide guidance for the design and performance optimization of SPAD devices.

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“…By optimizing the structure and increasing the reverse excess bias voltage, the device could achieve a more than 40% photon detection probability (PDP) in the wavelength range of 410 nm~760 nm [ 38 ]. The above research laid a solid structural foundation for the design of SPAD [ 39 , 40 , 41 , 42 ]. However, for the spectral selectivity requirements of Cd (II) detection, there is a lack of device structures with a high detection efficiency in the wavelength range of 500~600 nm.…”

Section: Introductionmentioning

confidence: 99%

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection

Wang

2022

Sensors

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Cadmium (Cd) pollution in soil is a serious threat to food security and human health, while, currently, the most widely used detection methods cannot accurately reflect the content of heavy metals in soil. Soil heavy metal detection combined with microelectronic sensors has become an important means of environmental heavy metal pollution prevention and control. X-ray Fluorescence spectrometry (XRF) can capture the excitation spectrum of metal elements, which is often used to detect Cd (II). However, due to the lack of high-performance optoelectronic devices, the analysis accuracy of the system cannot meet the requirements. Therefore, this study proposes a high-detection-efficiency photodiode (HDEPD) which can effectively improve the detection accuracy of the analyzer. The HDEPD is manufactured based on a 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. The volt-ampere curve, spectral response and noise characteristics of the device are obtained by constructing a test circuit combined with a spectral detection system. The test results show that the threshold voltage of HDEPD is 12.15 V. When the excess bias voltage increases from 1 V to 3 V, the spectral response peak of the device appears at 500 nm, and the photon detection probability (PDP) increases from 41.7% to 52.8%. The dark count rate (DCR) is 31.9 Hz/μm2 at a 3 V excess bias voltage. Since the excitation spectrum peak of Cd (II) is between 500 nm and 600 nm, the wavelength response range of HDEPD fully meets the detection requirements of Cd (II).

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Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Cited by 5 publications

References 14 publications

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

A simple Monte Carlo model for performance optimization of single photon avalanche diode

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection

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