2017
DOI: 10.1145/3143314.3078533
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Design-Induced Latency Variation in Modern DRAM Chips

Abstract: Variation has been shown to exist across the cells within a modern DRAM chip. Prior work has studied and exploited several forms of variation, such as manufacturing-process- or temperature-induced variation. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM chip: different regions in DRAM, based on their relative distances from the peripheral structures, require different minimum access latencies for r… Show more

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Cited by 31 publications
(2 citation statements)
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“…pLUTo introduces a novel LUT-querying mechanism, the pLUTo LUT Query, which enables the simultaneous querying of multiple LUTs stored in a single DRAM subarray. In pLUTo, the number of elements stored in each LUT may be as large as the number of rows in each DRAM subarray (e.g., 512-1024 rows [100][101][102]). pLUTo requires the following two modest modifications to DRAM hardware: 1) row sweeping logic, which enables the sweeping of DRAM rows, i.e., the successive activation of consecutive rows in a DRAM subarray; 2) match logic, which identifies matches between the elements in the input row and the index of the currently active row in the subarray that holds multiple copies of one or more LUTs.…”
Section: Introductionmentioning
confidence: 99%
“…pLUTo introduces a novel LUT-querying mechanism, the pLUTo LUT Query, which enables the simultaneous querying of multiple LUTs stored in a single DRAM subarray. In pLUTo, the number of elements stored in each LUT may be as large as the number of rows in each DRAM subarray (e.g., 512-1024 rows [100][101][102]). pLUTo requires the following two modest modifications to DRAM hardware: 1) row sweeping logic, which enables the sweeping of DRAM rows, i.e., the successive activation of consecutive rows in a DRAM subarray; 2) match logic, which identifies matches between the elements in the input row and the index of the currently active row in the subarray that holds multiple copies of one or more LUTs.…”
Section: Introductionmentioning
confidence: 99%
“…In this section, we first provide the necessary background on DRAM and Rowhammer for understanding the rest of the paper. We refer the reader to prior work [48,49,50,51,114,115,156,158,177,178,179,180,181,194,195,255,256,257,258,318] for a more detailed description of DRAM organization and operation. Then, we perform a preliminary analysis on recent DDR4 systems using existing "hammering" patterns in the literature [104,158,277] to investigate the current status of the Rowhammer vulnerability on DDR4.…”
Section: Rowhammer On Ddr4: Still a Problem?mentioning
confidence: 99%