Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient

Fadhuile, François; Taris, Thierry; Deval, Yann; Enz, Christian; Belot, Didier

doi:10.1007/s10470-016-0718-0

Cited by 6 publications

(7 citation statements)

References 9 publications

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“…Other sizing methods based on the Inversion Coefficient concept have been proposed [12]. However, in many circuits where passive elements play a key role such as Low Noise Amplifier (LNA), circuits are optimized using time-consuming iterations of the IC based method since no passive part related constraints are considered in the active part optimization [13].…”

Section: Classical Design Sizing Methods In Analog and Rfmentioning

confidence: 99%

Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Ghouli

Grabinski²,

Sallese

et al. 2018

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)

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The state-of-the art RF and millimeter-wave firstcut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and inaccurate concepts. Moreover, the pessimistic rules of thumb proposed for older bulk technologies are no more useful and lead to overdesign. This work takes advantage of the Moderate Inversion and uses low and high frequency figures of merit to provide a convenient sizing method for a 35 GHz Low Noise Amplifier (LNA) in 28 nm UTBB FDSOI technology.

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Section: Classical Design Sizing Methods In Analog and Rfmentioning

confidence: 99%

Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Ghouli

Grabinski²,

Sallese

et al. 2018

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)

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“…The IC is adopted in [8,9] as the basis of their design methodology. The design methodology adopted in [8] starts by characterizing the MOSFET in the target technology to extract the technology parameters forming the device parameters' expressions.…”

Section: Introductionmentioning

confidence: 99%

Graphical Design Approach for UWB Stacked CG LNA Using Inversion Coefficient

Hamed,

Ismail

2024

Electronics

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The design of ultra-wide-band (UWB) low-noise amplifiers (LNAs) entails a large number of design challenges and tradeoffs, which include sustaining good input matching over a wide bandwidth along with finding a proper compromise between various LNA performance metrics, such as gain, bandwidth, noise figure, power, and linearity. This paper presents a design approach for UWB LNAs based on the inversion coefficient (IC). The proposed approach is a graphical design approach where the proper operating point is chosen based on predefined constraints. A complete systematic solution is presented for the problem of UWB input matching with a high degree of analytical accuracy. The design approach is illustrated through the design of two UWB stacked common-gate LNAs in 65 nm technology. The post-layout simulation results show very good agreement with analytical expectations. The first LNA achieves an S11 better than −8.2 dB over a 27.6 GHz frequency range, a gain of 12.4 dB over a 16.5 GHz bandwidth, a minimum noise-figure, NF, of 4.5 dB, and an IIP3 of −5.2 dBm while consuming only 530 μW. The second LNA achieves an S11 better than −15 dB over an 8.8 GHz frequency range, a gain of 12.5 dB over a 6.8 GHz bandwidth, a minimum NF of 4 dB, and an IIP3 of −4.3 dBm while consuming only 550 μW.

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“…This approach eliminates the classical redesign iterations; however, it does not address the problem of transistor sizing. On the other hand, [28] reports a portable design methodology based on a low-power figure of merit (FOM) and inversion coefficient (IC). The IC is a normalization of the MOS drain current that allows a description of the transistor behavior independently of its technological parameters.…”

Section: Introductionmentioning

confidence: 99%

A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

et al. 2020

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This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.

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Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient

Cited by 6 publications

References 9 publications

Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Graphical Design Approach for UWB Stacked CG LNA Using Inversion Coefficient

A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

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