Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Am, Sokchea; Lefranc, Pierre; Frey, David

doi:10.1049/iet-pel.2014.0434

Cited by 12 publications

(8 citation statements)

References 16 publications

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“…Nowadays, the power converter for MV application is mostly used in electric ship, railway electrification, electrical power distribution [1][2][3][4][5][6][7][8]. According to works of literature, numerous modular voltage source converters (VSC) are proposed such as: Multilevel Converter [9], Neutral Point Clamp [10], Flying Capacitors [11], Cascaded Half-Bridge [12], and series connection of IGBT modules [13].…”

Section: Introductionmentioning

confidence: 99%

A Single Channel IGBT Gate Drivers for Medium Voltage Converters

Am¹,

Chrin²,

Kim³

et al. 2021

JEEE

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This article treats the gate driver system for IGBT modules in Medium-Voltage (MV) applications. The study focuses principally on two functions of an IGBT gate driver: an impulse signal transmission and a power transmission. For each function, the suitable topology is proposed. Then, for safety and device's protection reason, all gate driver functions must sustain the high and very high galvanic insulation voltage capabilities. For low-cost design, the insulation system can be achieved with the help of the insulating material in a pot core planar transformer. Therefore, for each function, the optimized design of a pot-core transformer and its associated electronics components is performed with the help of a virtual prototyping tool (a genetic algorithm: GA code in MATLAB TM ). The first section focuses on optimization design of a selected topology for an impulse signal transmission function. A bi-objective (maximize the output voltage v out and minimize the input current i mos ) problem of this function that leads to a Pareto front is presented. Several Pareto fronts' results are obtained assuming different insulation layers thickness. The second part focuses on optimization design of a selected topology for a power transmission function. Maximize the converter efficiency (η con ) and minimize the output power (P out ) are considered as a bi-objective. Thus, numerous Pareto fronts' results are achieved for a few different insulation thicknesses. Finally, the prototype of a single channel IGBT gate driver is invented to validate the proposed design.

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Section: Introductionmentioning

confidence: 99%

A Single Channel IGBT Gate Drivers for Medium Voltage Converters

Am¹,

Chrin²,

Kim³

et al. 2021

JEEE

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“…SiC MOSFETs have lower gate complexity [31][32][33][34] [37], offering extra functionalities like temperature monitoring or improved turn-OFF switching. For this purpose, a programmable device is needed (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…SiC MOSFETs have lower gate complexity [31–34], but the literature is much more limited compared with Si IGBTs. Regarding commercial gate drivers, some companies, such as Power Integrations, Avago or Rohm, have started offering solutions for SiC discrete (low power) devices, mainly based on the adaptation of standard Si drivers [35].…”

Section: Introductionmentioning

confidence: 99%

Gate driver for high power SiC modules: design considerations, development and experimental validation

Rujas

López

Mir

et al. 2018

IET Power Electronics

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The introduction the full-SiC (full silicon carbide) high power modules in the power semiconductors market makes necessary the development of new gate drivers suitable for its switching characteristics. The design considerations, challenges and implementation for high power SiC metal-oxide-semiconductor field-effect transistors is presented in this study. Aspects like voltage clamping, overcurrent/short-circuit protection, different power supply voltage levels, gate circuit and soft offswitching are addressed, considering the particularities that must be managed with SiC devices, like stray inductance and oscillations in switching transitions. All the gate drivers parts are designed without using programmable elements, that increase the complexity and cost of the gate driver design. Experimental results of the gate driver behaviour are also presented to validate the design. The approach proposes a modular gate driver divided into two parts. Firstly, a base driver (BD) board that depends on the electrical characteristics of the SiC module. Secondly, a core driver (CD) board, which can be considered 'universal' for any SiC power module with the same voltage operation level. For experimental validation, the proposed gate driver (BD + CD boards) is tested in two different power converters: a 50 kVA DC-AC inverter and a 100 kVA interleaved DC-DC converter.

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“…Gate drivers must provide, at least, communications functions and power supply functions. For communications functions, coreless transformers solutions [10], optical solutions [11], classical transformer solutions [12] and even giant magneto impedance material based material solution [13] are proposed in the literature. For the power supply functions, coreless transformers solutions [14] and classical transformer solutions [15] are widely used.…”

Section: Introductionmentioning

confidence: 99%

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

Sarrazin

Hanna

Lefranc

et al. 2017

IET Power Electronics

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The proposed study is about the design and experimental results of a power supply for gate drivers that can sustain 40 kV of insulation voltage with a parasitic capacitance of 4 pF. The first section focuses on insulation materials suitable for medium voltage capabilities and therefore to justify the use of polyesterimide and Teflon polytetrafluoroethylene materials. In a second step, experimental results are provided to guaranty that with a thickness of 1 mm of the insulation material, an insulation voltage of 40 kV is provided. Then, a DC-DC converter based on a series-series topology is designed and lead to a physical prototype of 5 W. The measured parasitic capacitance is 4 pF between the primary and the secondary sides.

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Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Cited by 12 publications

References 16 publications

A Single Channel IGBT Gate Drivers for Medium Voltage Converters

A Single Channel IGBT Gate Drivers for Medium Voltage Converters

Gate driver for high power SiC modules: design considerations, development and experimental validation

Insulated power supply for gate drivers up to 40 kV for medium‐voltage direct current applications

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