2022
DOI: 10.1109/access.2022.3200335
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Design, Modeling, and Analysis of a 3-D Spiral Inductor With Magnetic Thin-Films for PwrSoC/PwrSiP DC-DC Converters

Abstract: We would like to thank the members of the integrated magnetics group for providing the measurement data of magnetic thin-films (Co-Zr-Ta-B), and facilitating electrical characterization of PCB inductor.

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(2 citation statements)
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“…Benchmark of S‐RuM electroplated inductors with conventional state‐of‐the‐art (SoA) inductors. a) Benchmark chart of L/area vs Q/area for three types of S‐RuM inductors against other SoA micro‐inductors recently reported in the literature: [ 58–72 ] (green) 2‐cell, 5‐turn, Cu plated devices; (yellow) 4‐cell, 15‐turn, Cu plated devices; (red) 4‐cell, 10‐turn, Cu shell and magnetic core plated devices (circle for control/unplated, star for plated). b) Comparison of S‐RuM devices of the same geometries with and without electroplating: (green) 2‐cell, 5‐turn, Cu plated devices showing significant resistance drop; (yellow) 4‐cell, 15‐turn, Cu plated devices showing significant resistance drop; (red) 4‐cell, 5‐turn, and (blue) 4‐cell 10‐turn, Cu shell and magnetic core plated devices, showing both significant resistance drops and inductance increases (circle for control/unplated, triangle for plated).…”
Section: Integrated Plating Of Core and Shell In S‐rum Inductorsmentioning
confidence: 99%
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“…Benchmark of S‐RuM electroplated inductors with conventional state‐of‐the‐art (SoA) inductors. a) Benchmark chart of L/area vs Q/area for three types of S‐RuM inductors against other SoA micro‐inductors recently reported in the literature: [ 58–72 ] (green) 2‐cell, 5‐turn, Cu plated devices; (yellow) 4‐cell, 15‐turn, Cu plated devices; (red) 4‐cell, 10‐turn, Cu shell and magnetic core plated devices (circle for control/unplated, star for plated). b) Comparison of S‐RuM devices of the same geometries with and without electroplating: (green) 2‐cell, 5‐turn, Cu plated devices showing significant resistance drop; (yellow) 4‐cell, 15‐turn, Cu plated devices showing significant resistance drop; (red) 4‐cell, 5‐turn, and (blue) 4‐cell 10‐turn, Cu shell and magnetic core plated devices, showing both significant resistance drops and inductance increases (circle for control/unplated, triangle for plated).…”
Section: Integrated Plating Of Core and Shell In S‐rum Inductorsmentioning
confidence: 99%
“…Figure a compares the performance, inductance density (L/area) vs Q/area, of the S‐RuM power inductors with conventional state‐of‐the‐art (SoA) micro‐inductors with similar sizes, frequencies, and application targets. [ 58–72 ] By this figure of merit, S‐RuM Cu plated inductors achieved very high Q per area due to resistance improvements of over 10x. The Q value of the 2‐cell, 5‐turn S‐RuM inductors (plotted in green) improved from 2 to 15 without changing the physical areal footprint of 0.15 mm 2 , allowing this device design to reach a higher Q per area than all other reported micro‐inductors.…”
Section: Integrated Plating Of Core and Shell In S‐rum Inductorsmentioning
confidence: 99%