2016
DOI: 10.1109/tcpmt.2016.2556641
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Design, Modeling, Fabrication and Characterization of 2–5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> Redistribution Layer Traces by Advanced Semiadditive Processes on Low-Cost Panel-Based Glass Interposers

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Cited by 36 publications
(3 citation statements)
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“…A radically different situation from 15 years ago, nowadays various through glass via technologies have been investigated including mechanical, laser, and gasdischarge drilling as well as hybrid technologies combing wet etching and laser drilling [15] (see Section II-B). Furthermore, silicon-like RDL wiring on glass panels has become feasible by extending semi-additive process (SAP) methods once developed for fabrication of BEOL layers on chips [25]. In retrospect, these technological pillars have been spurred by the unique properties of glass materials which combine the advantages of organic and silicon substrates.…”
Section: Introductionmentioning
confidence: 99%
“…A radically different situation from 15 years ago, nowadays various through glass via technologies have been investigated including mechanical, laser, and gasdischarge drilling as well as hybrid technologies combing wet etching and laser drilling [15] (see Section II-B). Furthermore, silicon-like RDL wiring on glass panels has become feasible by extending semi-additive process (SAP) methods once developed for fabrication of BEOL layers on chips [25]. In retrospect, these technological pillars have been spurred by the unique properties of glass materials which combine the advantages of organic and silicon substrates.…”
Section: Introductionmentioning
confidence: 99%
“…The modifications are based on Defected Ground Structures (DGS) which are realized by 2-Dimensional etched symmetric areas on the metallic ground surface or on the signals trace of a CPW line. The transmission line with DGS has a unique property to prevent the propagation of electromagnetic waves in a specific frequency band along the transmission line [4].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the RDL was shrunken to fine pitch line/space (below 1.5 μm/1.5 μm) to increase the device density for high performance. 6,7 However, because of the anisotropic and poorly controlled etching of fine pitch lines, the SAP suffers from limitations such as undercutting, collapse, over-etching, and delamination during the Cu seed layer etching, 6,8 thereby decreasing the reliability of the package devices. Thus, the damascene process for RDL has been introduced to overcome these etching problems.…”
mentioning
confidence: 99%