Design of 3D integrated inductors for RFICs

Abstract

This paper discusses the design of 3D monolithic integrated inductors. The proposed 3D radio frequency (RF) integrated inductors have high inductance (L) values with an enhanced quality factors (Q). A new proposed method for 3D integrated inductors design is presented. A wide range of inductances and quality factor values can be realized. The proposed 3D inductors were designed in TSMC 0.18 μm technology and simulated using momentum.Keywords-3D monolithic integrated inductor; inductance(L) and quality factor (Q)

CMOS Ultra-Wideband Low Noise Amplifier Design

“…On the other hand placing a high resistive layer underneath the inductor can minimize the substrate losses. Lately optimized 3D structures and implementations of RF integrated inductors are suggested to overcome all of these limitations and improve the RF integrated inductors performance [4,5].…”

“…LNA2 NF ranges from 2.5 dB to 3.3 dB over the operating bandwidth . This NF reduction is accomplished due to the optimization of the LNA noise factor given by (4) and the use of weak shunt capacitive-resistive feedback implemented over the input stage. LNA2 achieves a NF less than 3.3 dB over the operating band of frequency as shown in Figure 8.…”

“…Design, development, and performance improvement of RF integrated inductors represent a challenging work. Achieving high integration level and cost minimization of RFICs are obstructed because of the difficulties facing the RF integrated inductors designers which are related to obtaining high quality factors [4][5][6].…”