Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications

A Power Efficient 32 nm Ternary Multiplier using Graphene Nanoribbon Field-Effect Transistor Technology

“…[4][5][6][7] These problems reduce the suitability of the MOSFET for power/energy-efficient applications. 5 In response, researchers have proposed various new alternative solutions and technologies to traditional MOSFET technology, such as fin-based FET (FinFET), [8][9][10][11][12][13][14] carbon nanotube-based FET (CNTFET), 6,7,15,16 and graphene nanoribbon-based FET (GNRFET). 4,[17][18][19] Among these emerging technologies, GNRFET offers excellent properties and is compatible with existing silicon-based MOSFET, and is an attractive option for achieving higher performance and efficiency in future electronic devices.…”