Design of a 350 kW DC/DC Converter in 1200-V SiC Module Technology for Automotive Component Testing

Alemanno, Alessio; Ronchi, F.; Rossi, C. A.; Pagliuca, Jacopo; Fioravanti, Matteo; Florian, Corrado

doi:10.3390/en16052341

Cited by 3 publications

(1 citation statement)

References 26 publications

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“…The harmonic reduction and power factor improvement switching are major challenges in converters of V2G [1]. In particular, the dual active bridge topology (DAB) is designed to transfer the energy between its ports bidirectionally enduring positive and negative current which interface between power sources and energy storage systems [2]. DAB must automatically maintain the desired output voltage in all working conditions as DC voltage sources [3].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application

Kasim

Robert

2023

E3S Web Conf.

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This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter. The DAB uses WBG (Wide-Bandgap) semiconductor devices such as SiC MOSFET to optimize the efficiency and extend soft-switching over whole operating range. The SiC MOSFET switching devices rated at 1200 V with different drain- source on-state resistance Rds(on) of 21 mΩ/32 mΩ is considered. Therefore, a reliable converter rated at 10 kW which works under normal operating condition at high-switching frequency of 100 kHz. The switching and conduction losses are taken under two different junction temperature such as 25 °C and 100 °C with various operating load current between 10 A to 40 A. Based on an analysis of SiC MOSFET based DAB attains 98.8% efficiency. The simulation results are taken as voltage and current waveforms at various points of converter are reported. This SiC based DAB converter would be used in next generation of V2G (Vehicle-to-Grid) and G2V (Grid-to-Vehicle) technology.

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Section: Introductionmentioning

confidence: 99%

A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application

Kasim

Robert

2023

E3S Web Conf.

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A Review on Various Voltage Boosting Topology in DC-DC Converter

Singh,

Yadav,

Dhaked

2024

EEENG

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Step-up DC-DC converters are employed to raise the output voltage level from the input voltage level. Although the basic boost dc-dc converter has advantages like simplicity of implementation, it also has drawbacks like low boost ability and low power density. The literature has reported various topologies which have switched inductor/voltage lift, switched capacitor, voltage multiplier, magnetic coupling, and multistage types. Each converter topology possesses its own advantages and disadvantages with a focus on power density, cost, efficiency, reliability, and complexity depending upon the applications. Demands of such applications are being fulfilled by using new power conversion topologies. Various combinations of such boosting topologies with additional components are complex. This paper provides a simple glance to the basic law and context for the development of future DC/DC converters. This paper has surveyed and classified various topologies according to the voltage-boosting topology and characteristics. The banes and boons of these topologies are also discussed in the paper with the applications of each boosting topology.

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Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional On-Board Charger with Integrated 1 kW, 12 V Auxiliary DC-DC Converter with High Power Density

Reali,

Alemanno,

Ronchi

et al. 2024

Micromachines

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Automotive-grade GaN power switches have recently been made available in the market from a growing number of semiconductor suppliers. The exploitation of this technology enables the development of very efficient power converters operating at much higher switching frequencies with respect to components implemented with silicon power devices. Thus, a new generation of automotive power components with an increased power density is expected to replace silicon-based products in the development of higher-performance electric and hybrid vehicles. 650 V GaN-on-silicon power switches are particularly suitable for the development of 3–7 kW on-board battery chargers (OBCs) for electric cars and motorcycles with a 400 V nominal voltage battery pack. This paper describes the design and implementation of a 6.6 kW OBC for electric vehicles using automotive-grade, 650 V, 25 mΩ, discrete GaN switches. The OBC allows bi-directional power flow, since it is composed of a bridgeless, interleaved, totem-pole PFC AC/DC active front end, followed by a dual active bridge (DAB) DC-DC converter. The OBC can operate from a single-phase 90–264 Vrms AC grid to a 200–450 V high-voltage (HV) battery and also integrates an auxiliary 1 kW DC-DC converter to connect the HV battery to the 12 V battery of the vehicle. The auxiliary DC-DC converter is a center-tapped phase-shifted full-bridge (PSFB) converter with synchronous rectification. At the low-voltage side of the auxiliary converter, 100 V GaN power switches are used. The entire OBC is liquid-cooled. The first prototype of the OBC exhibited a 96% efficiency and 2.2 kW/L power density (including the cooling system) at a 60 °C ambient temperature.

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Design of a 350 kW DC/DC Converter in 1200-V SiC Module Technology for Automotive Component Testing

Cited by 3 publications

References 26 publications

A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application

A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application

A Review on Various Voltage Boosting Topology in DC-DC Converter

Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional On-Board Charger with Integrated 1 kW, 12 V Auxiliary DC-DC Converter with High Power Density

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