Design of a 40-nm CMOS integrated on-chip oscilloscope for 5-50 GHz spin wave characterization

Abstract

Spin wave (SW) devices are receiving growing attention in research as a strong candidate for low power applications in the beyond-CMOS era. All SW applications would require an efficient, low power, on-chip read-out circuitry. Thus, we provide a concept for an on-chip oscilloscope (OCO) allowing parallel detection of the SWs at different frequencies. The readout system is designed in 40-nm CMOS technology and is capable of SW device characterization. First, the SWs are picked up by near field loop antennas, placed below yttrium iron garnet (YIG) film, and amplified by a low noise amplifier (LNA). Second, a mixer down-converts the radio frequency (RF) signal of 5 − 50 GHz to lower intermediate frequencies (IF) around 10 − 50 MHz. Finally, the IF signal can be digitized and analyzed regarding the frequency, amplitude and phase variation of the SWs. The power consumption and chip area of the whole OCO are estimated to 166.4 mW and 1.31 mm2, respectively.

Ferromagnetic resonance studies of strain tuned Bi:YIG films

“…

Magneto-crystalline anisotropy and Gilbert damping are the crucial parameters for a material to be used in various spin-based device applications [1][2][3][4]. The emerging field of spintronics promises dense and fast memory architectures, enabling huge data storage and fast information processing [5][6][7][8][9][10][11][12][13][14]. The spin current based devices would be highly efficient with almost no thermal losses unlike charge-based electronics and could be used in energy harvesting by recycle of heat waste via spin-caloritronics [1,[15][16][17][18][19].

…”

Nanoscale neural network using non-linear spin-wave interference

“…More specifically, picking up magnetic oscillations from sub-square-micrometer areas will induce less than a microvolt voltage in the transducer antenna, possibly even less than that. Amplifying such small and high-frequency signals requires significant microwave circuitry, which consumes at least 10 mW of power 19 , 20 . Assuming a GHz date rate, this gives E = 10 −11 J per output point.…”

Nanoscale neural network using non-linear spin-wave interference

“…More specifically, picking up magnetic oscillations from sub-square-micrometer areas will induce less then a microvolt voltage in the transducer antenna, possibly even less then that. Amplifying such small and high-frequency signals requires significant microwave circuitry, which consumes at least 10 mW of power 16 . Assuming a GHz date rate, this gives E = 10 −11 J per output point.…”