Design of a Bismuth-Activated Narrow-Band Cyan Phosphor for Use in White Light Emitting Diodes and Field Emission Displays

Ye, Shanshan; Hai, Liu; Wang, Yijie; Lin, Jiao; Zhong, Kun; Ding, Jianyan

doi:10.1021/acssuschemeng.0c06593

Cited by 76 publications

(26 citation statements)

References 50 publications

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“…The emission peak centered at 500 nm relates to a broadband excitation with a peak of about 290 nm, which is ascribed to the 1 S 0 -1 P 1 transition of Bi 3+ . 31 PLE spectra of Ba 0.99 Ga 2 O 4 :0.01Bi also give consistent results with diffuse reflectance spectrum. The emission peak of 610 nm corresponds to an excitation band with three primary peaks at 240, 270, and 315 nm (Figure 3B).…”

Section: Luminescent Propertiessupporting

confidence: 79%

“…Under 290 nm excitation, Ba 0.99 Ga 2 O 4 :0.01Bi exhibited two broadband PL peaks at 500 and 610 nm, which is consistent with the former results, 30 mainly stemming from the 3 P 1 – 1 S 0 transition of Bi 3+ . The emission peak centered at 500 nm relates to a broadband excitation with a peak of about 290 nm, which is ascribed to the 1 S 0 – 1 P 1 transition of Bi 3+ 31 . PLE spectra of Ba 0.99 Ga 2 O 4 :0.01Bi also give consistent results with diffuse reflectance spectrum.…”

Section: Resultssupporting

confidence: 63%

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A multicolor‐emitted phosphor for temperature sensing and multimode dynamic anti‐counterfeiting

et al. 2022

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The charge carrier capture phosphors for multifunctional integrated applications are gaining popularity these days. The realization of multiple optical properties often requires complex modulation processes, such as multiple ions doping and matrix substitution. Herein, we designed a single-doped Ba 0.99 Ga 2 O 4 :0.01Bi phosphor with two emission peaks of 500 and 610 nm, both of which have different responses when changing temperatures (298-473 K). Theoretical calculations combined with experimental studies imply that the dopant Bi 3+ ions occupy regular Ba sites and the vacancy-surrounded Ba sites, which act as luminescence centers. Meanwhile, doping-induced 𝑉 ′′′ Ga and Bi ⋅ Ba defects can operate as traps to store carriers that could be released and migrate toward specific luminescent centers under thermal disturbance. This phosphor shows excellent absolute sensitivity toward optical temperature sensing (S a = 3.4% K −1 ). We also offered a quadruple anti-counterfeiting application show based on the multicolor emission behavior of Ba 0.99 Ga 2 O 4 :0.01Bi with photostimulated luminescence at room temperature, different photoluminescent colors at room and high temperatures, as well as afterglow colors from yellow to green. This work stimulates the exploration of modulating the luminescence centers and trap levels to construct multifunctional fluorescent materials.

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Section: Luminescent Propertiessupporting

confidence: 79%

Section: Resultssupporting

confidence: 63%

A multicolor‐emitted phosphor for temperature sensing and multimode dynamic anti‐counterfeiting

et al. 2022

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“…[1][2][3][4][5][6][7] performance of garnets is mainly affected by their structure and adjustable composition. [11][12][13][14][15][16][17][18][19] Consequently, a sequence of Cr 3+ -doped garnet phosphors, for instance Ca 3 Sc 2 Si 3 O 12 :Cr 3+ (λ max = 770 nm, FWHM = 110 nm), [11] Ca 2 LuZr 2 Al 3 O 12 :Cr 3+ (λ max = 740 nm, FWHM = 117 nm), [12,13] Ca 2 LuHf 2 Al 3 O 12 :Cr 3+ (λ max = 785 nm, FWHM = 145 nm), [14] Gd 3 Sc 2 Ga 3 O 12 : Cr 3+ (λ max = 761 nm, FWHM = 110 nm), [15] Y 2 CaAl 4 SiO 12 :Cr 3+ , (λ max = 744 nm, FWHM = 160 nm), [16] Ca 3 Ga 2 Ge 3 O 12 : Cr 3+ (λ max = 760 nm, FWHM = 120 nm), [17] Ca 2 YHf 2 Al 3 O 12 :Cr 3+ (λ max = 775 nm, FWHM = 137 nm), [18] and Y 2 CaAl 4 SiO 12 :Cr 3+ (λ max = 744 nm, FWHM = 160 nm) [19] etc., have been widely studied and applied in pc-NIR LED-related applications.…”

Section: Introductionmentioning

confidence: 99%

Trade‐off Lattice Site Occupancy Engineering Strategy for Near‐Infrared Phosphors with Ultrabroad and Tunable Emission

Lang

Cai

Fang

et al. 2021

Advanced Optical Materials

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Accordingly, phosphor-converted (pc) NIR light-emitting diodes (LEDs) have received extensive scientific attention as lighting sources, owing to their conspicuous characteristics and range of applications. [8] The integration of blue InGaN LED chips with NIR phosphors is considered a promising strategy for yielding novel high-performance NIR light sources with broadband spectra. [9][10][11][12] Since NIR phosphors are key parts of these devices, affecting their overall luminescence performance and emission spectrum, selecting the appropriate phosphor is paramount. In this regard, for the design of efficient broadband NIR phosphors, applying a suitable activator as an ideal luminescence center is of vital importance.Chromium (Cr) exhibits a broadband absorption in the visible spectral range stemming from its distinctive 3d 3 electronic configuration. Besides, Cr 3+ ions can display a tunable narrowband or broadband spectrum (from deep red to the NIR region) depending on whether they are in a strong or weak crystal field environment, respectively. [9][10][11] Correspondingly, garnets possess a stable cubic crystal structure with a complex arrangement of different cations in the unit cell and exhibit several advantages, including a high thermal stability and long distances between alkali ions. The specific physicochemical Broadband near-infrared (NIR) luminescent materials have received notable attention due to their distinct photophysical properties for designing NIR light-emitting diodes (NIR LEDs). Here, a series of Ca 3−x Lu x Ga 2+x Ge 3−x O 12 :Cr 3+ (CLGGG:Cr 3+ ) (x = 0-1) NIR-emitting garnet phosphors with an emission range of 660-1200 nm are successfully developed and their lattice parameters are structurally analyzed. Upon 460 nm blue light excitation, the NIR phosphors exhibit both a substantial spectral broadening (FWHM: 129→267 nm) and a redshift of 37 nm (766→803 nm) with cosubstitution of [Lu 3+ -Ga 3+ ] pairs for [Ca 2+ -Ge 4+ ] sites. Furthermore, their luminescence thermal stability is substantially improved, maintaining ≈90% of the original photoluminescence intensity at 150 °C, owing to shrinkage of the second coordination sphere and rigid lattice, which are strongly associated with Cr 3+ trade-off occupancy and local structure evolutions. The relation between the trade-off site occupation of Cr 3+ in GaO 6 /CaO 8 polyhedrons and the NIR emission is also clarified by evaluating the decay and electron paramagnetic resonance behavior of Cr 3+ at different sites. The broadband NIR phosphors investigated here can serve as auspicious luminescent converters for phosphor-converted NIR LEDs and can provide an inspiring platform for future studies.

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“…In the field of illumination, phosphor-converted white-light-emitting diodes (pc-WLEDs) are integrated into our daily lives due to their long lifetime and low energy consumption, − while thermal quenching seriously affects the efficiency and the color rendering index of pc-WLEDs. − The development of white-light-emitting phosphors with excellent thermal stability is currently a major challenge. In the optical temperature detection field, zero-contact temperature detectors on the basis of the fluorescence intensity ratio (FIR) technique have been extensively studied, and some temperature detection phosphors with good temperature measurement performance have been developed. − However, improving the relative sensitivity of the detector has always been a major problem in optical temperature measurements. The relative sensitivity of an optical temperature detector rests with the thermal quenching ratio of different luminous centers.…”

Section: Introductionmentioning

confidence: 99%

Constructing a Model for Tuning the Thermal Quenching Properties of Bismuth-Doped Phosphors by Energy-Gap Modulation

Guo

Wang

et al. 2021

J. Phys. Chem. C

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Thermal quenching performance is a huge challenge in the application of phosphor materials. In this paper, the relationship between the energy gap of luminescent ions and the thermal quenching activation energy (ΔE) is discussed from the angle of energy-level splitting for the first time. When the proportion of coordination cations (Nb–Ta) in the matrix is adjusted, the dissimilarity in bond lengths and bond angles of the two crystal configurations (NbO6/TaO6) makes the crystal electron cloud expand, the decrease in atomic orbital overlap reduces the covalency, and the nephelauxetic effect enlarges the bond length between the dopant and the ligand, thus decreasing the crystal field splitting energy of trivalent bismuth ions, which weakens the splitting degree of the P energy level, leading to an increase in the energy gap from 3.854 to 4.101 eV. Interestingly, the thermal quenching performance of YNb1–x Ta x O4:Bi3+ (YNTO:Bi3+) also changes with the Nb–Ta ratio, and the thermal quenching activation energy is positively correlated with the energy-gap value. Guided by the density functional theory calculations on the ligand structure, we establish the functional relationship between the energy-gap value and ΔE; the tuning of the thermal quenching activation energy of the Bi-doped phosphors from 0.473 to 0.543 eV is realized by controlling the ratio of Nb5+/Ta5+. The Bi3+–Eu3+ double-doped white-light-emitting phosphors prepared according to this mechanism can still emit warm white light at 463 K. The topological chemical design of the ligand configuration realizes the modulation of the thermal quenching activation energy, and this method can be used as a model to design various novel ΔE-adjustable fluorescent powder materials.

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Design of a Bismuth-Activated Narrow-Band Cyan Phosphor for Use in White Light Emitting Diodes and Field Emission Displays

Cited by 76 publications

References 50 publications

A multicolor‐emitted phosphor for temperature sensing and multimode dynamic anti‐counterfeiting

A multicolor‐emitted phosphor for temperature sensing and multimode dynamic anti‐counterfeiting

Trade‐off Lattice Site Occupancy Engineering Strategy for Near‐Infrared Phosphors with Ultrabroad and Tunable Emission

Constructing a Model for Tuning the Thermal Quenching Properties of Bismuth-Doped Phosphors by Energy-Gap Modulation

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