Design of a Broadband and Low Loss TM Magneto-Optical Waveguide Isolator Based on Lithium Niobate on Insulator

Li, Mingxuan; Zhao, Yiru; Dai, Shi-Bo; Yu, Wantai; Li, Jinye; Zhang, Zhike; Liu, Jianguo

doi:10.1109/jphot.2021.3058686

Cited by 3 publications

(4 citation statements)

References 32 publications

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“…At a wavelength of 1550 nm, the device has a maximum 30 dB bandwidth of 72 nm. The reported NRPS and bandwidth of this work are superior to those of isolators based on other platforms [8,23,26,45]. The effects of length difference of the waveguide arm and dimension errors of the waveguide core layer on the isolation bandwidth and the central wavelength of transmittance were analyzed.…”

Section: Discussionmentioning

confidence: 91%

“…Currently, integrating MO isolators with CMOS-compatible semiconductor platforms remains challenging due to factors such as lattice mismatch and shape-induced birefringence. The most widely studied MO isolators are based on silicon-on-insulator (SOI) platforms [ 22 , 23 , 24 , 25 , 26 ]. SOI waveguides are compatible with CMOS technology but the integration of light sources made of III-V compound semiconductors with SOI platforms is difficult [ 27 , 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

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On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Chen,

Liu,

Zhao

et al. 2024

Nanomaterials

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An integrated optical isolator is a crucial part of photonic integrated circuits (PICs). Existing optical isolators, predominantly based on the silicon-on-insulator (SOI) platform, face challenges in integrating with active devices. We propose a broadband, compact TM mode Mach–Zehnder optical isolator based on InP-on-insulator platforms. We designed two distinct magneto-optical waveguide structures, employing different methods for bonding Ce:YIG and InP, namely O2 plasma surface activation direct wafer bonding and DVS-benzocyclobutene (BCB) adhesive bonding. Detailed calculations and optimizations were conducted to enhance their non-reciprocal phase shift (NRPS). At a wavelength of 1550 nm, the direct-bonded waveguide structure achieved a 30 dB bandwidth of 72 nm with a length difference of 0.256 µm. The effects of waveguide arm length, fabrication accuracy, and dimensional errors on the device performance are discussed. Additionally, manufacturing tolerances for three types of lithographic processes were calculated, serving as references for practical manufacturing purposes.

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Section: Discussionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Chen,

Liu,

Zhao

et al. 2024

Nanomaterials

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“…Traditional approach to achieve optical non-reciprocity is through the magneto-optic effect. In fact, by integrating magneto-optic materials into the waveguides and applying a strong magnetic field, one can achieve different phase shifts for the light traveling in opposite directions [1]- [3]. Therefore, by integrating such material in a ring resonator, one can achieve different resonant frequencies for the clockwise (c.w.)…”

Section: Introductionmentioning

confidence: 99%

Design Guidelines for a Tunable SOI Based Optical Isolator in a Partially Time-Modulated Ring Resonator

Zarif¹,

Mehrany

Memarian

et al. 2022

IEEE Photonics J.

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In this paper, we present the design guidelines for a tunable optical isolator in an SOI-based ring resonator with two small time-modulated regions. By considering a physical model, the proper geometrical and modulation parameters are designed, based on a standard CMOS foundry process. The effect of the variation of the key parameters on the performance of the isolator is explained by two counter-acting mechanisms, namely the separation between the resonance frequencies of counterrotating modes and energy transfer to the side harmonic. We show that there is a trade-off between these parameters to obtain maximum isolation. Consequently, by applying the quadrature phase difference one can obtain the maximum separation between the resonance frequencies and hence the minimum insertion loss, while the maximum isolation is obtained at the modulation phase difference of −0.78π, which leads to a higher insertion loss. Robustness of the design is investigated through a sensitivity analysis for the fabrication variations in the distance and width of the modulated regions. We demonstrate that there is a tradeoff between isolation and insertion loss, and by varying the modulation parameters, we can achieve isolation of 18 (5) dB with 7 (1.8) dB insertion loss.

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“…It has been proved be an effective way by inserting nonreciprocal devices, such as optical isolators and circulators, at the doorways of Alice and Bob. Nonetheless, traditional integrated nonreciprocal devices are generally based on magneto-optical effects [29][30][31], but both magneto-optical materials and magnets used to generate magnetic fields are difficult to be compatible with current semiconductor integration technology. This resulted in previous chip-based QKD systems unable to integrate nonreciprocal components and be exposed to injecting-type attacks [32][33][34][35][36][37][38][39][40][41][42][43].…”

Section: Introductionmentioning

confidence: 99%

A new amber outcrop from the Oligocene Nanning Basin of Guangxi, southern China

Liu¹,

Guang-chun

Lian

et al. 2021

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Ambers in China have been described from the various localities of both Cretaceous (e.g., Xixia amber from Henan Province and Jalainur [Zhalainuoer] amber from northeastern Inner Mongolia) and Palaeogene (e.g., Eocene Fushun amber of Liaoning Province and Miocene Zhangpu amber of Fujian Province) ages to date (e.g., Hong, 1981, 2002; Shi et al., 2014; Wang et al., 2014; Azar et al., 2019; Wang et al., 2021). Here we report a new amber locality from the Late Oligocene of Nanning Basin, Guangxi, southern China. The first amber piece was collected by one of the authors (GCZ) on 5 June 2008. In a recent field work in early 2021, we further discovered more than 50 smaller amber pieces, which are reported here.

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Design of a Broadband and Low Loss TM Magneto-Optical Waveguide Isolator Based on Lithium Niobate on Insulator

Cited by 3 publications

References 32 publications

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Design Guidelines for a Tunable SOI Based Optical Isolator in a Partially Time-Modulated Ring Resonator

A new amber outcrop from the Oligocene Nanning Basin of Guangxi, southern China

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