Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

Abstract

In this paper, we present a broadband Ka-band LNA using 0.15-µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. By using bandwidth enhancement techniques and deep negative feedback technology, the LNA achieves relatively broadband performances. The LNA attains 20 dB small signal gain from 25 to 40 GHz and shows a measured noise figure of 2.8 dB from 25 to 40 GHz with 230-mW dc power consumption. The input and output return loss of the LNA is less than 8 dB, which is competitive compared with other published Ka-band LNAs. The size of the chip is 2.5 mm × 1.2 mm.

Design of a Ka-band receiver front end using Si-based system in package

“…Excluding the in-band attenuation of the SIW filter and the measured attenuation of the downconverter, it can be calculated that the loss introduced by the wirebond structure and redistribution layer transmission line is only 1.35 dB, proving the practicability of the wirebond impedance compensation structure introduced in the second section. In addition, after introducing extra signal gain of two low noise amplifiers commonly used in the Ka-band before the filter input and behind the filter output [31], the conversion gain of the receiver front end can be raised to 26.6 dB, which is enough for an actual complete RF receiver front end. The warpage of the whole four-layer system in package sample is measured using TherMoiré Warpage Measurement System.…”

A 1.6-dB minimum NF, 28-38GHz GaAs low noise amplifier using wideband multistage noise matching technique

“…However, due to the lossy silicon substrate and low carrier mobility, these LNAs have relatively poor noise figure, gain, and linearity performance. III-V semiconductors such as GaN and GaAs have significant advantages in intrinsic gain and noise performance, so they are widely used in mm-wave front-end modules [8,9,10,11,12,13,14,15,16,17,18,19]. Furthermore, GaN technology is costly.…”

A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications

“…The former includes CMOS, SiGe BiCMOS, and silicon on insulator (SOI) and has the advantages of low power consumption, high integrability, low cost and compact size but poor in noise figure and gain [3], [4]. The latter consists of conventional InP [5] and GaAs [6] high mobility transistors (HEMTs) which have lower noise figure (NF) and higher gain than the silicon technologies. More recently, GaN HEMT has received great attention for its excellent performance in both low noise and high power [7] - [9].…”

“…The former includes complementary metal oxide semiconductor (CMOS), silicon germanium bipolar complementary metal oxide semiconductor (SiGe BiCMOS), and silicon on insulator which have the advantages of low power consumption, high integrability, low cost, and compact size but is poor with regard tonoise figure (NF) and gain [3,4]. The latter consists of conventional Indium phosphide (InP) [5] and gallium arsenide (GaAs) [6] high electron mobility transistors (HEMTs) which have lower NF and higher gain than the silicon technologies. More recently, gallium nitride (GaN) HEMTs have received great attention for their excellent performance in both low noise and high power [7][8][9].…”