Design of a fast in situ infrared diagnostic tool

Abstract

Articles you may be interested inDesign, development, and demonstration of a fully LabVIEW controlled in situ electrochemical Fourier transform infrared setup combined with a wall-jet electrode to investigate the electrochemical interface of nanoparticulate electrocatalysts under reaction conditions Rev. Sci. Instrum. 84, 074103 (2013); 10.1063/1.4816826 Design and operating characteristics of a transient kinetic analysis catalysis reactor system employing in situ transmission Fourier transform infrared Rev. Sci. Instrum. 77, 094104 (2006); 10.1063/1.2349602 Characterization of the rapid expansion of supercritical solutions by Fourier transform infrared spectroscopy in situ Rev. Sci. Instrum. 76, 053904 (2005);

High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing

“…Hence, from the measured dc bias voltage, a plasma density n e =n i i9Â10 17 m À3 is deduced using Eqs. (1) and (2). This plasma density is somewhat lower than the plasma densities previously reported for an ETP reactor with a different geometry [31].…”

“…For instance, for economical viability, a high deposition rate is often a prerequisite. This is one motivation for the extensive studies to which the expanding thermal plasma (ETP) has been subject, as this plasma source enables very high deposition rates in the order of tens of nm/ s for hydrogenated amorphous silicon (a-Si:H) [1], silicon oxide (SiO x ) [2][3][4], and diamond-like carbon (a-C:H) films [5]. The plasma deposited films become sufficiently dense for most applications only for substrate temperatures over 250 8C, especially when high growth rates are involved.…”