Design of a Flexible-Grid 1 × 2 Wavelength-Selective Switch Using Silicon Microring Resonators

Wang, Pengjun; Yang, Tianjun; Dai, Tingge; Wang, Gencheng; Zhang, Jie; Chen, Weiwei; Yang, Jianyi

doi:10.1109/jphot.2017.2772928

Cited by 7 publications

(4 citation statements)

References 29 publications

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“…Temperature and pressure influence the absorption coefficient and effective RI 38 . The thermo-optical coefficient of Si is about 1.86×10−4·K−1 when the temperature is 300 K 39 Figure 10(a). depicts ΔLOD, ΔS, and εg-7.70 affected by the pressure.…”

Section: Analysis and Discussionmentioning

confidence: 99%

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On-chip long-wave infrared gas sensor based on subwavelength grating waveguide

Liao,

Zhang,

Wang

et al. 2023

J. Nanophoton.

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A long-wave infrared (LWIR) on-chip gas sensor based on subwavelength grating waveguide is proposed. By optimizing the grating structural parameters, the corresponding slow-light region is overlapped with the absorption spectrum of methane, which can greatly improve the light-gas interaction to achieve excellent sensing performance. The presented waveguide gas sensor is designed to operate at the wavelength of 7.70 μm, which corresponds to the methane absorption peak in the LWIR and exhibits a high slow-light enhancement factor of 7.514. The related sensitivity and limit of detection are, respectively, 26.54393 and 0.1327 ppm.

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Section: Analysis and Discussionmentioning

confidence: 99%

“…Si is about 1.86 × 10 −4 • K −1 when the temperature is 300 K. 39 20.28649%, and ΔLOD is reduces from 19.93639% to −20.35993%. According to the above analysis, the pressure has a small effect on the sensing performance, whereas the temperature has a more significant effect on the sensing performance.…”

Section: Effects Of Pressure and Temperaturementioning

confidence: 94%

On-chip long-wave infrared gas sensor based on subwavelength grating waveguide

Liao,

Zhang,

Wang

et al. 2023

J. Nanophoton.

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“…[6][7][8][9] In our previous work, silicon-based flexible-grid WSSs using MRRs and the thermo-optic effect were presented. [10][11][12] However, to maintain the switching state with less power consumption, a non-volatile flexible-grid WSS (NVFGWSS) is needed. 13 In this paper, an NVFGWSS using subwavelength-grating-Ge 2 Sb 2 Te 5 (GST)-assisted silicon MRRs is proposed, designed, and analyzed.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the characteristics of a high scalability, low power consumption, and compact footprint, silicon microring resonators (MRRs) have been adopted to implement various active and passive optical devices 6 – 9 In our previous work, silicon-based flexible-grid WSSs using MRRs and the thermo-optic effect were presented 10 – 12 However, to maintain the switching state with less power consumption, a non-volatile flexible-grid WSS (NVFGWSS) is needed 13 …”

Section: Introductionmentioning

confidence: 99%

Non-volatile flexible-grid wavelength-selective switch using subwavelength-grating-Ge2Sb2Te5-assisted silicon microring resonators

Zheng,

Kong,

Liang

et al. 2023

J. Nanophoton.

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.A non-volatile flexible-grid wavelength-selective switch (NVFGWSS) based on subwavelength-grating-Ge2Sb2Te5 (GST)-assisted silicon microring resonators (MRRs) is proposed. By controlling the state of the subwavelength grating GST and the phase shifter, the transmission spectra of the designed subwavelength-grating-GST-assisted silicon MRRs are combined, and thus tunable bandwidths (BWs) are generated as required. A comprehensive analysis of the presented subwavelength-grating-GST-assisted silicon MRRs and the corresponding NVFGWSS is given. Numerical simulations reveal that, for the designed module comprising a subwavelength-grating-GST-assisted silicon MMR and an ellipse-based crossing waveguide, its maximum crosstalk (CT) and insertion loss are −18.08 and 0.50 dB, respectively. For the designed NVFGWSS, as the channel spacing is 0.8 nm, the in-band ripple and CT are <0.895 and −13.006 dB, respectively, and the 3-dB BW changes from 0.51 to 3.2 nm.

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