Design of a High-Efficiency Dual-Helical Antenna for Microwave Plasma Sources

Niazi, A.Y.; Amrollahi, R.; Sadeghi, H.

doi:10.1109/tps.2022.3144201

Cited by 22 publications

(5 citation statements)

References 27 publications

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“…Next, some other interesting results with regard to fixed point theorems in fuzzy metric spaces, elementary fixed point theory for mappings, etc., can be found in the papers of Imdad et al [29], Sessa and Akkouchi [30], Sessa et al [31], Jafarzadeh et al [32], and Nazi et al [33].…”

Section: ) and The Kernelmentioning

confidence: 98%

Existence and Uniqueness of Solutions of Hammerstein-Type Functional Integral Equations

Tunç,

Alshammari,

Akyildiz

2023

Symmetry

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The authors deal with nonlinear and general Hammerstein-type functional integral equations (HTFIEs). The first objective of this work is to apply and extend Burton’s method to general and nonlinear HTFIEs in a Banach space via the Chebyshev norm and complete metric. The second objective of the paper is to extend and improve some earlier results to nonlinear HTFIEs. The authors prove two new theorems with regard to the existence and uniqueness of solutions (EUSs) of HTFIEs via a technique called progressive contractions, which belongs to T. A. Burton, and the Chebyshev norm and complete metric.

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Section: ) and The Kernelmentioning

confidence: 98%

Existence and Uniqueness of Solutions of Hammerstein-Type Functional Integral Equations

Tunç,

Alshammari,

Akyildiz

2023

Symmetry

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“…To obtain q n and q 1n , physical parameters such as a, L, W and D need to be designed. Based on equations ( 11)-( 14), in the proposed structure, as 2a L ¼ 0:9 and W D ¼ 0:9, so, aq 11 ¼0.417 and q 1 W p ¼ 0:420 are selected (Niazi et al, 2022(Niazi et al, , 2023. According to Figure 1(c) as an ECM, the impedance load tends to the graphene ribbons (Z L ¼Z Graphene-Ribbon1 ).…”

Section: Graphene Patterns and Su-8 Photoresistmentioning

confidence: 99%

“…To obtain q n and q 1n , physical parameters such as a, L, W and D need to be designed. Based on equations (11)–(14), in the proposed structure, as 2aL=0.9 and WD=0.9, so, aq 11 =0.417 and q1Wπ=0.420 are selected (Niazi et al ., 2022, 2023).…”

Section: Proposed Devicementioning

confidence: 99%

An optoelectronic Coupler based on graphene patterns and SU-8 photoresist

Zandi,

Fouladian,

Mazloum

2024

COMPEL

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Purpose The purpose of this research is to efficiently separate incident terahertz (THz) waves into distinct transmission and reflection channels by minimizing the absorption ratio. So, the optical systems operating within the THz frequency range can developed. To achieve a multi-band response, four different periodic arrays of graphene patterns are used. These arrays are strategically stacked on both sides of three SU-8 photoresists, serving as dielectric materials. Consequently, each layer exhibits a unique influence on the device's response, and by applying four external bias voltages, the behavior of the device can be precisely controlled and adjusted. Design/methodology/approach A novel optoelectronic device operating in the THz frequency range is introduced, using periodic arrays of graphene patterns and SU-8 photoresist dielectrics. The design of this device is based on meta-surface principles, using both the equivalent circuit model (ECM) and transmission line concept. The output of the device is a THz coupler implemented by analyzing the reflection and transmission channels. The structure is characterized using the ECM and validated through comprehensive full-wave simulations. By representing the electromagnetic phenomenon with passive circuit elements, enabling the calculation of absorption, reflection and transmission through the application of the theory of maximum power transfer. Findings Based on simulation results and theoretical analysis, the proposed device exhibits sensitivity to gate biasing, enabling efficient reflection and transmission of THz waves. The device achieves reflection and transmission peaks exceeding across the five distinct THz bands 90%, and its behavior can be tuned by external gate biasing. Moreover, the device's sensitivity to variations in geometrical parameters and chemical potentials demonstrates its reliable performance. With its outstanding performance, this high-performance meta-surface emerges as an ideal candidate for fundamental building blocks in larger optical systems, including sensors and detectors, operating within the THz frequency band. Originality/value The proposed device covers a significant portion of the THz gap through the provision of five adjustable peaks for reflection and transmission channels. Additionally, the ECM and impedance matching concept offers a simplified and time-efficient approach to designing the meta-surface. Leveraging this approach, the proposed device is effectively represented using passive circuit elements such as inductors, capacitors and resistors, while its performance is validated through the utilization of the finite element method (FEM) as a full-wave simulation tool. This combination of circuit modeling and FEM simulation contributes to the robustness and accuracy of the device's performance evaluation.

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“…The foundational concept of a reconfigurable solid-state plasma antenna was originally proposed by Fathy et al [6] in 2003. This concept offers a significant level of operational flexibility and enhanced integration compared to a gas-state plasma antenna [7][8][9][10][11][12][13][14][15]. Subsequent advancements in this field have been characterized by notable contributions.…”

Section: Introductionmentioning

confidence: 99%

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

Jin,

Zhou,

Lou

et al. 2024

J. Phys. D: Appl. Phys.

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This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator (SOI) technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current-voltage (I-V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I-V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes' conduction onset voltages. Additionally, a cavity-backed slot antenna (CBSA) is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.

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Design of a High-Efficiency Dual-Helical Antenna for Microwave Plasma Sources

Cited by 22 publications

References 27 publications

Existence and Uniqueness of Solutions of Hammerstein-Type Functional Integral Equations

Existence and Uniqueness of Solutions of Hammerstein-Type Functional Integral Equations

An optoelectronic Coupler based on graphene patterns and SU-8 photoresist

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

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