Design of a high-sensitivity extended mid-wave infrared InAsSb-based nBn photodetector by utilizing barrier band engineering technique: an outstanding device for biosensing applications

Shaveisi, Maryam; Aliparast, Peiman

doi:10.1007/s11082-023-05013-2

Cited by 5 publications

(2 citation statements)

References 43 publications

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“…1−3 However, contemporary semiconductor photodetectors face a myriad of challenges in terms of high-speed response, sensitivity, and material selection, necessitating novel materials and structures to enhance device performance and meet the demands of future applications. 4,5 Recently, the emergence of two-dimensional materials has injected new hope into the field of semiconductor optoelectronics. 6−9 Two-dimensional materials such as graphene 10 and transition metal dichalcogenides (TMDs) 11 have garnered significant attention for their unique electrical and optical properties, presenting enormous potential for the development of photodetectors.…”

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confidence: 99%

“…Superior photodetectors play a pivotal role in modern technology, spanning fields such as communication, information technology, and optoelectronics. − However, contemporary semiconductor photodetectors face a myriad of challenges in terms of high-speed response, sensitivity, and material selection, necessitating novel materials and structures to enhance device performance and meet the demands of future applications. , …”

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confidence: 99%

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Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Fan,

He,

Feng

et al. 2024

J. Phys. Chem. Lett.

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The implementation of energy-saving policies has stimulated intensive interest in exploring self-powered optoelectronic devices. The 2D p-n homojunction exhibits effective generation and separation of carriers excited by light, realizing lower power consumption and higher performance photodetectors. Here, a self-powered photodetector with high performance is fabricated based on an F4-TCNQ localized molecular-doped lateral InSe homojunction. Compared with the intrinsic InSe photodetector, the switching light ratio (I light/I dark) of the p-n homojunction device can be enhanced by 2.2 × 104, and the temporal response is also dramatically improved to 24/30 μs. Benefiting from the built-in electric field, due to the formation of an InSe p-n homojunction after partial doping of F4-TCNQ on InSe, the device possesses a high responsivity (R) of 93.21 mA/W, with a specific detectivity (D*) of 1.14 × 1011 Jones. These results suggest a promising approach to get a lateral InSe p-n homojunction and reveal the potential application of the device for next generation low-consumption photodetectors.

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confidence: 99%