Design of a highly efficient 0.6-4.5GHz multioctave bandwidth GaN-HEMT power amplifier

Abstract

A methodology for designing multioctave high-efficiency power amplifiers (PA) is presented in this letter. The sequential loadpull technique (SLPT) considering the second and third harmonic characteristics is proposed and combined with the multiple frequency matching theory (MFMT) to achieve outstanding performance in terms of operating bandwidth as well as efficiency. To verify the proposed theory, a 10 W GaN HEMT device is used. The proposed PA achieves a fractional bandwidth of 152% from 0.6 to 4.5 GHz. In such a wide frequency band, the drain efficiency (DE) is measured as 50% -68% with an output power of greater than 38 dBm and a large signal gain greater than 8 dB.

High efficiency wideband continuous class power amplifier design based on reflection coefficient circle impedance area optimization

“…With the development of communication technology, there is an increasing demand for power amplifiers (PAs) to achieve higher transmission rates and quality [1,2,3,4]. However, the availability of wireless spectrum resources is becoming more and more limited, which imposes restrictions on the continuous operational bandwidth of future mobile communication systems.…”