With increase in popularity of efficient low-power compact hardware and medical devices with better efficiency and battery backup has increased the need to utilize reliable methods for designing analog and mixed-signal circuits. The desired circuit performance with least power consumption can be achieved by relative scaling of device geometry and its parameters [1][2][3][4][5]. The conventional gate-driven technique is not much effective in this respect so the research has been done on the usage of non-conventional techniques. An alternate to conventional techniques can be a bulk-driven technique. Here, the input is connected at the bulk terminal of the MOSFET instead of biasing it with either the source terminal or the supply voltages thus removing the threshold voltage. The self-biased technique is used to attain high output impedance and high voltage swing with low power consumption [6][7]. The super-cascode technique is utilized at the output to improve the swing of waveform. Bandwidth of circuit is also enhanced using the compensating resistance technique. The simulations of the proposed current mirror are carried out at 180 nm CMOS technology [8][9][10].