Design of a Low Voltage D-band LNA in 22 nm FDSOI

Hetterle, Philip; Engelmann, Andre; Probst, Florian; Weigel, Robert; Dietz, Marco

doi:10.23919/eumic54520.2022.9923520

Cited by 6 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Micromachines 2023, 14, x FOR PEER REVIEW 7 of 10 For benchmarking and comparison with other sub mm Wave designs, refer to Tables 1 and 2. Compared to other reported works in [13,14,[20][21][22][23], the low-noise amplifier achieved state-of-the-art performance. According to Table 1, the proposed LNA achieves high gain, offers the second lowest amount of power consumption, and provides a lownoise figure.…”

Section: Measurement Resultsmentioning

confidence: 77%

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Mustapha

Sanduleanu

2023

Micromachines

View full text Add to dashboard Cite

This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157–166 GHz frequency band. The −3 dB gain bandwidth corresponded to 157–166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the −3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.

show abstract