Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.

4^th generation wireless transceiver design

“…These technologies include GaAs and SiGe HBT's (for power amplifiers [2] , GaAs PHEMTs and CMOS SOI/SOS, for switches [3] , and SAW/BAW filters [4], which are all integrated into front-end modules (FEMs) with a high degree of sophistication. In addition, emerging technologies that hold considerable promise for FEMs include MEMS switches [5] and high linearity varactors [6].…”

The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors

“…Due to advantages of high electron mobility, high breakdown voltage and low conductivity substrate, GaAs-based pseudo-morphic high electron mobility transistor (p-HEMT) is a preferred choice to realize monolithic microwave integrated circuits (MMICs), especially for high power handling capability applications, as power amplifiers (PAs) (1)- (10) and switches (11)- (15). In practical PA designs, transistors are commonly biased at a high supply voltage to acquire high output power and good power efficiency.…”