Design of a Microwave Bias-Tee Using Lumped Elements with a Wideband Characteristic for a High Power Amplifier

Abstract

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz～10 GHz.

Comparative Analysis of Data Acquisition Setups for Fast Timing in ToF-PET Applications

“…Ideally, we would like to design a Bias-T with a 0 dB insertion loss and a low return loss in the frequency domain needed by the system. In our case, the Balun transformer gives the bandwidth limitation for the lower band (10 MHz) and the timing amplifier for the higher one (8 GHz) [34,35]. To validate the performance of the bias-T design, an LTspice test was conducted, comparing the standard bias-T implementation with a pass-band modified version.…”