Design of a nanoelectromechanical high-index-contrast guided-wave optical switch for single-mode operation at 1.55 μm

Povinelli, Michelle L.; Bryant, R.; Assefa, Solomon; Johnson, Steven G.; Fan, Shanhui; Erchak, A.A.; Petrich, G.S.; Lidorikis, Elefterios; Joannopoulos, J. D.; Kolodziejski, L. A.; Ippen, Erich P.

doi:10.1109/lpt.2003.816706

Cited by 5 publications

(5 citation statements)

References 10 publications

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“…A similar approach has been proposed in the past [25], [26] with large attenuation ( 65 dB) at low actuation voltages (2.5 V) obtained experimentally, although successful switching was not demonstrated. Optical switches using MEMS-actuated evanescent coupling in gallium arsenide waveguides were simulated in [27], and MEMS-actuated displays using cantilevers and evanescent coupling were experimentally demonstrated in [28]. Successful coupling between a movable silicon waveguide and a fixed micro-disk resonator optical filter was also recently demonstrated [29].…”

Section: B Advantages Of Mems-based Couplersmentioning

confidence: 99%

“…A second approach requires redesign of the waveguide geometry. Polarization-insensitive MEMS couplers have been simulated by Povinelli et al [27]. However, these devices required waveguides of width and precise waveguide gaps of similar dimension , which requires electron-beam lighography and is beyond the scope of this work.…”

Section: G Polarization and Wavelength Dependencementioning

confidence: 99%

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InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Pruessner

Amarnath

Datta

et al. 2005

J. Microelectromech. Syst.

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An optical waveguide MEMS switch fabricated on an indium phosphide (InP) substrate for operation at 1550 nm wavelength is presented. Compared to other MEMS optical switches, which typically use relatively large mirrors or long end-coupled waveguides, our device uses a parallel switching mechanism. The device utilizes evanescent coupling between two closely-spaced waveguides fabricated side by side. Coupling is controlled by changing the gap and the coupling length between the two waveguides via electrostatic pull-in. This enables both optical switching and variable optical coupling at voltages below 10 V. Channel isolation as high as 47 dB and coupling efficiencies of up to 66% were obtained with switching losses of less than 0.5 dB. We also demonstrate voltage-controlled variable optical coupling over a 17.4 dB dynamic range. The devices are compact with 2 m 2 m core cross section and active area as small as 500 m 5 m. Due to the small travel range of the waveguides, fast operation is obtained with switching times as short as 4 s. Future devices can be scaled down to less than 1 m 1 m waveguide cross-sectional area and device length less than 100 m without significant change in device design.[1372]Index Terms-Directional coupler, indium phosphide (InP), integrated waveguides, optical MEMS switches.

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Section: B Advantages Of Mems-based Couplersmentioning

confidence: 99%

Section: G Polarization and Wavelength Dependencementioning

confidence: 99%

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Pruessner

Amarnath

Datta

et al. 2005

J. Microelectromech. Syst.

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“…The propagating wave inside the cantilever waveguide was butt-coupled to two static output waveguides as the cantilever was laterally aligned to each output waveguide facet as potential was applied to lateral electrodes in parallel to the cantilever beam [87]. Since then, there have been multiple groups that have iterated on this design and developed similar optomechanical switches in other materials, including a wide range of silicon based, polymer based, and finally InPbased semiconductors [14,[88][89][90][91][92][93][94][95][96].…”

Section: Optomechanical Switchingmentioning

confidence: 99%

Fabrication challenges for indium phosphide microsystems

Siwak

Fan

Ghodssi

2015

J. Micromech. Microeng.

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From the inception of III-V microsystems, monolithically integrated device designs have been the motivating drive for this field, bringing together the utility of single-chip microsystems and conventional fabrication techniques. Indium phosphide (InP) has a particular advantage of having a direct bandgap within the low loss telecommunication wavelength (1550 nm) range, able to support passive waveguiding and optical amplification, detection, and generation depending on the exact alloy of In, P, As, Ga, or Al materials. Utilizing epitaxy, one can envision the growth of a substrate that contains all of the components needed to establish a single-chip optical microsystem, containing detectors, sources, waveguides, and mechanical structures. A monolithic InP MEMS system has, to our knowledge, yet to be realized due to the significant difficulties encountered when fabricating the integrated devices. In this paper we present our own research and consolidate findings from other research groups across the world to give deeper insight into the practical aspects of InP monolithic microsystem development: epitaxial growth of InP-based alloys, etching techniques, common MEMS structures realized in InP, and future applications. We pay special attention to shedding light on considerations that must be taken when designing and fabricating a monolithic InP MEMS device.

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“…Furthermore, the high degree of etch selectivity, created by combining the oxide with III-V materials, presents new opportunities to use the oxide as a sacrificial layer in micro-electro-mechanical structures and nano-electro-mechanical structures. 15,16 Recently, the use of low-index, oxidized Al-containing material has been employed in photonic bandgap crystal structures that require high dielectric contrast in their design. 7,17 In addition, broadband dielectric-stack structures that use oxidized low-index layers can be monolithically integrated with saturable absorbers for mode-locking ultrashort pulse lasers.…”

Section: Introductionmentioning

confidence: 99%

Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides

Tandon

Gopinath

Erchak

et al. 2004

Journal of Elec Materi

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The wet oxidation of AlAs and AlGaAs has been limited to relatively small lateral dimensions and relatively thin layers. Approaches are described to extend the oxide dimensions both horizontally and vertically, creating largearea and thick buried oxides. Two types of large-area structures are examined: dielectric stacks with thin buried oxides and semiconductor-on-insulator structures with thick buried oxides. Low Al-content AlGaAs layers with low oxidation rates are used as the high-index layers in large-area dielectric-stack structures. High Al-content AlGaAs layers with low volume contraction are used to create stable, thick buried oxides with millimeter-scale areas.

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Design of a nanoelectromechanical high-index-contrast guided-wave optical switch for single-mode operation at 1.55 μm

Cited by 5 publications

References 10 publications

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Fabrication challenges for indium phosphide microsystems

Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides

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